絲?。?strong>4G；Package：SOT23；PNP general purpose transistors

FEATURES ?Low current (max. 100 mA) ?Low voltage (max. 45 V).

文件：355.55 Kbytes 頁數(shù)：9 Pages

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絲?。?strong>4G；Package：SOT323；PNP general purpose transistors

FEATURES ?Low current (max. 100 mA) ?Low voltage (max. 45 V).

文件：330.54 Kbytes 頁數(shù)：8 Pages

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絲印：4G；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 頁數(shù)：14 Pages

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絲?。?strong>4G；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 頁數(shù)：14 Pages

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絲印：4G；Package：SOT-23；SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR

SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR FEATURES * 60 Volt VCEO PARTMARKING DETAIL - 4G

文件：31.61 Kbytes 頁數(shù)：1 Pages

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絲印：4G；Package：SC-62；150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

Features and benefits * High voltage * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC

文件：277.04 Kbytes 頁數(shù)：14 Pages

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絲?。?strong>4G；Package：SC-74；50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description NPN/NPN Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package. PNP/PNP complement: PIMP32 NPN/PNP complement: PIMC32 2. Features and benefits ? 500 mA output current capability ? Built-in bias resistors ?

文件：259.12 Kbytes 頁數(shù)：11 Pages

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絲印：4G；Package：SC-74；50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description NPN/NPN Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package. PNP/PNP complement: PIMP32-Q NPN/PNP complement: PIMC32-Q 2. Features and benefits ? 500 mA output current capability ? Built-in bias resistors

文件：260.69 Kbytes 頁數(shù)：12 Pages

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絲?。?strong>4G；Package：SOT1220；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Low threshold voltage ? Trench MOSFET technology ? Side we

文件：299.72 Kbytes 頁數(shù)：14 Pages

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絲?。?strong>4G；Package：SOT-23；PNP Transistors

文件：540.59 Kbytes 頁數(shù)：4 Pages

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