| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印：4H1；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: ? DC-DC Converters ? Power Management Functions ? Battery Operated Systems and Solid-State Relays ? D 文件：620.44 Kbytes 頁(yè)數(shù)：7 Pages | DIODES 美臺(tái)半導(dǎo)體 | DIODES | ||
絲?。?strong>4H1；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: ? DC-DC Converters ? Power Management Functions ? Battery Operated Systems and Solid-State Relays ? D 文件：620.44 Kbytes 頁(yè)數(shù)：7 Pages | DIODES 美臺(tái)半導(dǎo)體 | DIODES | ||
絲?。?strong>4H1；Package：SOT-23；TMAG5124 2-Wire, High-Precision, Hall-Effect Switch Sensor 文件：1.82057 Mbytes 頁(yè)數(shù)：31 Pages | TI 德州儀器 | TI | ||
絲?。?strong>4H1；Package：SOT-23；TMAG5124 2-Wire, High-Precision, Hall-Effect Switch Sensor 文件：1.82057 Mbytes 頁(yè)數(shù)：31 Pages | TI 德州儀器 | TI | ||
絲印：4H11G；Package：LFPAK4；Power Transistor 80 V, 8 A Dual General Purpose NPN Designed for general purpose power and switching applications such as regulators, converters and power amplifiers. Housed in advanced LFPAK package (5 x 6 mm) with excellent thermal conduction. Automotive end applications include air bag deployment, power train control units, and instrument cl 文件：1.66812 Mbytes 頁(yè)數(shù)：6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/4h11g/marking.html">4H11G；Package：LFPAK4；Power Transistor 80 V, 8 A Dual General Purpose NPN Designed for general purpose power and switching applications such as regulators, converters and power amplifiers. Housed in advanced LFPAK package (5 x 6 mm) with excellent thermal conduction. Automotive end applications include air bag deployment, power train control units, and instrument cl 文件：1.66812 Mbytes 頁(yè)數(shù)：6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/4h199sep/marking.html">4H199SEP；Package：SOT-23-THIN；OPA4H199-SEP 40-V, Radiation Hardened, Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp in Space Enhanced Plastic 1 Features ? Radiation hardened – Single Event Latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C – ELDRS free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for every wafer lot up to 30 krad(Si) ? Supports defense, aerospace, and medical applications – Single controlled baseline – One fab 文件：2.46996 Mbytes 頁(yè)數(shù)：38 Pages | TI 德州儀器 | TI | ||
絲印：4H199SEP；Package：SOT-23-THIN；OPA4H199-SEP 40-V, Radiation Hardened, Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp in Space Enhanced Plastic 1 Features ? Radiation hardened – Single Event Latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C – ELDRS free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for every wafer lot up to 30 krad(Si) ? Supports defense, aerospace, and medical applications – Single controlled baseline – One fab 文件：2.46996 Mbytes 頁(yè)數(shù)：38 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/4h199sep/marking.html">4H199SEP；Package：SOT-23-THIN；OPA4H199-SEP 40-V, Radiation Hardened, Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp in Space Enhanced Plastic 1 Features ? Radiation hardened – Single Event Latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C – ELDRS free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for every wafer lot up to 30 krad(Si) ? Supports defense, aerospace, and medical applications – Single controlled baseline – One fab 文件：2.46996 Mbytes 頁(yè)數(shù)：38 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/4h1z/marking.html">4H1Z；Package：SOT-23；TMAG5124-Q1 Automotive 2-Wire, High-Precision, Hall-Effect Switch Sensor 文件：1.86959 Mbytes 頁(yè)數(shù)：31 Pages | TI 德州儀器 | TI |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Diodes Incorporated |
21+ |
SOT-23 |
10000 |
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))!! |
詢價(jià) | ||
Diodes Incorporated |
2022+ |
TO-236-3,SC-59,SOT-23-3 |
38550 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
DIODES/美臺(tái) |
24+ |
N/A |
500000 |
美臺(tái)原廠超低價(jià)支持 |
詢價(jià) | ||
DIODES(美臺(tái)) |
25+ |
SOT-23 |
6843 |
樣件支持,可原廠排單訂貨! |
詢價(jià) | ||
DIODES(美臺(tái)) |
25+ |
SOT-23 |
6895 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價(jià) | ||
24+ |
N/A |
76000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
NK/南科功率 |
2025+ |
SOT-23 |
986966 |
國(guó)產(chǎn) |
詢價(jià) | ||
DIODES/美臺(tái) |
2511 |
SOT-23 |
360000 |
電子元器件采購(gòu)降本30%!原廠直采,砍掉中間差價(jià) |
詢價(jià) | ||
Diodes(美臺(tái)) |
25+ |
SOT-23 |
500000 |
源自原廠成本,高價(jià)回收工廠呆滯 |
詢價(jià) | ||
TECH PUBLIC(臺(tái)舟) |
23+ |
SOT-23-3L |
4355 |
三極管/MOS管/晶體管 > 場(chǎng)效應(yīng)管(MOSFET) |
詢價(jià) |
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