絲?。?strong>4AK；Package：DO221-AC；400 W TVS in SMA Flat

Features ? Peak pulse power: 400 W (10/1000 μs) and 2.5 kW (8/20 μs) ? Flat and thin package: 1 mm ? Stand-off voltage range from 5 V to 188 V ? Unidirectional type ? Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C ? Operating Tj max: 175 °C ? High power capability at Tj max.: up to

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STMICROELECTRONICS

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Silicon N-Channel Power MOS FET Array

Silicon N-Channel Power MOS FET Array Features ? Low on-resistance RDS(on) ≤0.06 , VGS = 10 V, ID= 5 A RDS(on) ≤0.075 , VGS = 4 V, ID= 5 A ? Capable of 4 V gate drive ? Low drive current ? High speed switching ? High density mounting ? Suitable for

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HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET High Speed Power Switching

Features ? Low on-resistance RDS(on) ≤ 0.15?, VGS = 10V, ID = 3.0A ? 4V gate drive devices. ? High density mounting

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HITACHIHitachi Semiconductor

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Silicon N-Channel Power MOS FET Array

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HITACHIHitachi Semiconductor

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Silicon N-Channel Power MOS FET Array

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HITACHIHitachi Semiconductor

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Silicon N-Channel Power MOS FET Array

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HITACHIHitachi Semiconductor

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Silicon N-Channel Power MOS FET Array

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HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET High Speed Power Switching

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HITACHIHitachi Semiconductor

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Silicon N-Channel Power MOS FET Array

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HITACHIHitachi Semiconductor

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Silicon N-Channel Power MOS FET Array

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HITACHIHitachi Semiconductor

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