絲印：4B；Package：SOT23；PNP general purpose transistors

FEATURES ?Low current (max. 100 mA) ?Low voltage (max. 45 V).

文件：355.55 Kbytes 頁(yè)數(shù)：9 Pages

NEXPERIA

安世

絲?。?strong>4B；Package：SOT323；PNP general purpose transistors

FEATURES ?Low current (max. 100 mA) ?Low voltage (max. 45 V).

文件：330.54 Kbytes 頁(yè)數(shù)：8 Pages

NEXPERIA

安世

絲印：4B；Package：DFN2020MD-6；40 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Extended temperature range Tj = 175 °C ? Side wettable flanks for o

文件：311.11 Kbytes 頁(yè)數(shù)：15 Pages

NEXPERIA

安世

絲?。?strong>4B；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 頁(yè)數(shù)：14 Pages

NEXPERIA

安世

絲?。?strong>4B；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 頁(yè)數(shù)：14 Pages

NEXPERIA

安世

絲?。?strong>4B；Package：X2-DFN1006-3；N-CHANNEL ENHANCEMENT MODE MOSFET

Features ? Footprint of Just 0.6mm2 – Thirteen Times Smaller than SOT23 ? 0.4mm Profile – Ideal for Low Profile Applications ? Low Gate Threshold Voltage ? Fast Switching Speed ? ESD Protected Gate ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green”

文件：475.54 Kbytes 頁(yè)數(shù)：7 Pages

DIODES

美臺(tái)半導(dǎo)體

絲印：4B；Package：PG-TSDSON-8-44；OptiMOSTM 7 Power-Transistor

Features ? OptiMOSTM power MOSFET for automotive applications ? N-channel – Enhancement mode – Normal Level ? Extended qualification beyond AEC-Q101 ? Enhanced electrical testing ? Robust design ? MSL1 up to 260°C peak reflow ? 175°C operating temperature ? RoHS compliant ? 100% Avala

文件：2.93933 Mbytes 頁(yè)數(shù)：12 Pages

INFINEON

英飛凌

絲?。?strong>4B；Silicon Planar Zener Diodes

FEATURES ? Total power dissipation: Max. 500mW. ? Wide zener reverse voltage range 2.0V to 75V. ? Small plastic package suitable for surface mounted design. ? Tolerance approximately±5

文件：776.59 Kbytes 頁(yè)數(shù)：2 Pages

JUXING

廣東鉅興電子

絲?。?strong>4B；Package：SC-62；100 V, 1 A NPN low VCEsat (BISS) transistor

Features * SOT89 package * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High efficiency leading to less heat generation

文件：327.72 Kbytes 頁(yè)數(shù)：16 Pages

NEXPERIA

安世

絲?。?strong>4B；Package：DFN2510D；ESD protection for high-speed interfaces

1. General description This bidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2 at 10 Gbps, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial

文件：241.42 Kbytes 頁(yè)數(shù)：11 Pages

NEXPERIA

安世