絲?。?strong>3W；Package：X2-DFN0606-3；45V PNP SMALL SIGNAL TRANSISTOR IN DFN0606

Features BVCEO > -45V IC = -100mA High Collector Current PD = 925mW Power Dissipation 0.36mm2 Package Footprint, 40 Smaller than DFN1006 0.4mm Height Package Minimizing Off-Board Profile Complementary NPN Type BC847BFZ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Anti

文件：479.92 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導體

絲?。?strong>3W；Package：DFN85x6；MOSFET – Power, Single N-Channel, STD Gate, DUAL COOL DFN8 5x6

Features ? Advanced Dual?Sided Cooled Packaging ? Low QRR, Soft Recovery Body Diode ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Applications ? Synchronous Rectific

文件：423.49 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導體

絲?。?strong>3W；Package：DFN1006BD-2；Unidirectional ESD protection diode

1. General description Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with si

文件：227.85 Kbytes 頁數(shù)：11 Pages

NEXPERIA

安世

絲?。?strong>3W；Package：SOT1220；20 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Extended temperature range Tj = 175 °C ? Small and leadless

文件：305.31 Kbytes 頁數(shù)：15 Pages

NEXPERIA

安世

絲?。?strong>3W；Package：SOD323F；Single Zener diodes

1.1 General description General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits 1.3 Applications ? General regulation functions ? Non-repetitive peak reverse power dissipation: ? 180 W ? Low differen

文件：995.99 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

絲印：3W；Package：SOT-416；Shottky barrier diode

文件：981.63 Kbytes 頁數(shù)：4 Pages

ROHM

羅姆

絲印：3W；Package：SC-90；Single Zener diodes

文件：997 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

絲?。?strong>3W；Package：DSBGA；200-mA, Low IQ, Low-Noise, Low-Dropout Regulator in Ultra-Small, 0.77-mm ? 0.77-mm DSBGA and PicoStar

文件：1.27031 Mbytes 頁數(shù)：36 Pages

TI

德州儀器

絲印：3W；Package：DSBGA；200-mA, Low IQ, Low-Noise, Low-Dropout Regulator in Ultra-Small, 0.77-mm ? 0.77-mm DSBGA and PicoStar

文件：1.27031 Mbytes 頁數(shù)：36 Pages

TI

德州儀器

絲印：3W0；Package：P-SON；P-SON 4-pin, High-Current and Low-ON-Resistance Type

New Non-Leaded, High-Current P-SON Package ? Load voltage 30 V/60 V/100 V. ? 30 V relay: Continuous load current of 4.5 A max. ? 60 V relay: Continuous load current of 3 A max. ? 100 V relay: Continuous load current of 2 A max. ? High Ambient operating temperature: -40°C to +110°C

文件：1.41484 Mbytes 頁數(shù)：4 Pages

OMRON

歐姆龍