絲?。?strong>3U；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1 Features ? Input voltage range pack+: VSS – 0.3V to 12V ? FET drive: – CHG and DSG FET drive output ? Voltage sensing across external FETs for overcurrent protection (OCP) is within ±5mV (typical) ? Fault detection – Overcharge detection (OVP) – Over-discharge detection (UVP) – Charge

文件：1.44954 Mbytes 頁數(shù)：34 Pages

TI

德州儀器

絲?。?strong>3U；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1 Features ? Input voltage range pack+: VSS – 0.3V to 12V ? FET drive: – CHG and DSG FET drive output ? Voltage sensing across external FETs for overcurrent protection (OCP) is within ±5mV (typical) ? Fault detection – Overcharge detection (OVP) – Over-discharge detection (UVP) – Charge

文件：1.44954 Mbytes 頁數(shù)：34 Pages

TI

德州儀器

絲?。?strong>3U；Package：DFN1006BD-2；Unidirectional ESD protection diode

1. General description Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with si

文件：228.51 Kbytes 頁數(shù)：11 Pages

NEXPERIA

安世

絲?。?strong>3U；Package：DFN2510A-10；ESD protection for high-speed interfaces

1. General description This unidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2 at 10 Gbps, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Seria

文件：219.15 Kbytes 頁數(shù)：11 Pages

NEXPERIA

安世

絲印：3U；Package：SOT1220；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Extended temperature range Tj = 175 °C ? Small and leadless

文件：314.67 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

絲?。?strong>3U；Package：SOD-323；1-Line Unl-directional TVS Diode

Features * 300W peak pulse power (8/20ps) * Protects one data or power line + Ultra low leakage: nA level + Operating voltage: 3.3V + Ultra low clamping voltage + Complies with following standards: — IEC 61000-4-2 (ESD) immunity test Air discharge: +30kV Contact discharge: +30kV —IEC6100

文件：1.23797 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子

絲?。?strong>3U；Package：SOT-343；Schottky Barrier Diode

●Features High reliability Small mold type Super Low VF ●Application Small current rectification

文件：1.73791 Mbytes 頁數(shù)：7 Pages

ROHM

羅姆

絲?。?strong>3U；Package：EMD4；Schottky barrier diode

Schottky barrier diode Features 1) Ultra Small power mold type. (EMD4) 2) Low VF 3) High reliability. Applications Low current rectification Construction Silicon epitaxial planar

文件：185.14 Kbytes 頁數(shù)：4 Pages

ROHM

羅姆

絲?。?strong>3U；Package：SOD323F；Single Zener diodes

1.1 General description General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits 1.3 Applications ? General regulation functions ? Non-repetitive peak reverse power dissipation: ? 180 W ? Low differen

文件：995.99 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

絲印：3U；Package：SOD-323；100 Watts peak pulse power (tp = 8/20μs)

Description The ClampTM series of Transient Voltage Suppressors (TVS) are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDAs. They offer superior electrical characteristics such as lower clamping voltage and no device de

文件：394.87 Kbytes 頁數(shù)：5 Pages

UMW

友臺半導(dǎo)體