絲印：3C3；Package：SMA；Surface Mount Zener Diodes

文件：379.93 Kbytes 頁數(shù)：3 Pages

ANOVA

林朋科技

絲印：3C3；Package：DO214AA；Surface Mount Silicon Zener Diodes

文件：648.26 Kbytes 頁數(shù)：3 Pages

LEIDITECH

雷卯電子

絲印：3C30；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 % . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimi

文件：3.40045 Mbytes 頁數(shù)：5 Pages

UNSEMI

優(yōu)恩半導體

絲印：3C33；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 % . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimi

文件：3.40045 Mbytes 頁數(shù)：5 Pages

UNSEMI

優(yōu)恩半導體

絲?。?a target="_blank" title="Marking" href="/3c36/marking.html">3C36；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 % . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimi

文件：3.40045 Mbytes 頁數(shù)：5 Pages

UNSEMI

優(yōu)恩半導體

THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS

THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.

文件：164.7 Kbytes 頁數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS

THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.

文件：164.7 Kbytes 頁數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

TYPES 1C - 9C Ceramic Capacitors

FEATURES ElIA characteristics COG, X7R, Z5U Capacitance range 10pF to 4.7HF Voltage ratings 50 WVDC to 100 WVDC Wide choice of lead spacing

文件：483.08 Kbytes 頁數(shù)：4 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

TYPES 1C - 9C Ceramic Capacitors

FEATURES ElIA characteristics COG, X7R, Z5U Capacitance range 10pF to 4.7HF Voltage ratings 50 WVDC to 100 WVDC Wide choice of lead spacing

文件：483.08 Kbytes 頁數(shù)：4 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

TYPES 1C - 9C Ceramic Capacitors

FEATURES ElIA characteristics COG, X7R, Z5U Capacitance range 10pF to 4.7HF Voltage ratings 50 WVDC to 100 WVDC Wide choice of lead spacing

文件：483.08 Kbytes 頁數(shù)：4 Pages

ETCList of Unclassifed Manufacturers

未分類制造商