絲?。?strong>3C7；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 % . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimi

文件：3.40045 Mbytes 頁數(shù)：5 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲?。?strong>3C7；Package：DO-214AC；Surface Mount Zener Diodes

文件：379.93 Kbytes 頁數(shù)：3 Pages

ANOVA

林朋科技

絲?。?strong>3C7；Package：DO214AA；Surface Mount Silicon Zener Diodes

文件：648.26 Kbytes 頁數(shù)：3 Pages

LEIDITECH

雷卯電子

絲印：3C7V；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 % . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimi

文件：3.40045 Mbytes 頁數(shù)：5 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/3c70/marking.html">3C70；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 % . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimi

文件：3.40045 Mbytes 頁數(shù)：5 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/3c75/marking.html">3C75；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 % . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimi

文件：3.40045 Mbytes 頁數(shù)：5 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/3c725l/marking.html">3C725L；Package：SOT669；N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower technology

1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified to 175°C Low

文件：471.77 Kbytes 頁數(shù)：16 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/3c730l/marking.html">3C730L；Package：SOT669；N-channel 30 V 3.95mΩ logic level MOSFET in LFPAK using NextPower technology

1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified to 175°C Low

文件：467.99 Kbytes 頁數(shù)：16 Pages

NEXPERIA

安世