絲?。?strong>358；Package：SOT-23；P?CHANNEL MOSFET

Features ? Low gate charge (4 nC typical) ? High performance trench technology for extremely low R DS(ON) . ? High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30 higher power handling capability. ? VDS (V) = -30V ? ID = -1.5 A ? RDS(ON) 90m (VGS = -

文件：324.26 Kbytes 頁數(shù)：5 Pages

EVVOSEMI

翊歐

絲?。?strong>358；Package：SO-8；Low Power Dual Operational Amplifiers

■ Internally frequency compensated ■ Large DC voltage gain: 100dB ■ Wide bandwidth (unity gain): 1.1mHz (temperature compensated) ■ Very low supply current/op (500μA) essentially independent of supply voltage ■ Low input bias current: 20nA (temperature compensated) ■ Low input offset volta

文件：276.79 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

意法半導體

絲?。?strong>358；Package：Micro8；Single Supply Dual Operational Amplifiers

Utilizing the circuit designs perfected for Quad Operational Amplifiers, these dual operational amplifiers feature low power drain, a common mode input voltage range extending to ground/VEE, and single supply or split supply operation. The LM358 series is equivalent to one?half of an LM324. These

文件：220.31 Kbytes 頁數(shù)：14 Pages

ONSEMI

安森美半導體

絲?。?strong>358；Package：SO-8；Low Power Dual Operational Amplifiers

■ Internally frequency compensated ■ Large DC voltage gain: 100dB ■ Wide bandwidth (unity gain): 1.1mHz (temperature compensated) ■ Very low supply current/op (500μA) essentially independent of supply voltage ■ Low input bias current: 20nA (temperature compensated) ■ Low input offset volta

文件：276.79 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

意法半導體

絲?。?strong>358；Package：SO8；Low-power dual operational amplifiers

Features Frequency compensation implemented internally Large DC voltage gain: 100 dB Wide bandwidth (unity gain): 1.1 MHz (temperature compensated) Very low supply current per channel essentially independent of supply voltage Low input bias current: 20 nA (temperature compensated) Low input

文件：1.07811 Mbytes 頁數(shù)：25 Pages

STMICROELECTRONICS

意法半導體

絲印：358；Package：SO8；Low-power dual operational amplifiers

Features Frequency compensation implemented internally Large DC voltage gain: 100 dB Wide bandwidth (unity gain): 1.1 MHz (temperature compensated) Very low supply current per channel essentially independent of supply voltage Low input bias current: 20 nA (temperature compensated) Low input

文件：1.07811 Mbytes 頁數(shù)：25 Pages

STMICROELECTRONICS

意法半導體

絲?。?strong>358；Package：TSSOP-8；Low Power Dual Operational Amplifiers

■ Internally frequency compensated ■ Large DC voltage gain: 100dB ■ Wide bandwidth (unity gain): 1.1mHz (temperature compensated) ■ Very low supply current/op (500μA) essentially independent of supply voltage ■ Low input bias current: 20nA (temperature compensated) ■ Low input offset volta

文件：276.79 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

意法半導體

絲?。?strong>358；Package：Micro8；Single Supply Dual Operational Amplifiers

文件：137.67 Kbytes 頁數(shù)：14 Pages

ONSEMI

安森美半導體

絲?。?strong>358；Package：Micro8；Single Supply Dual Operational Amplifiers

文件：142.39 Kbytes 頁數(shù)：14 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/3581amp-g1/marking.html">3581AMP-G1；Package：PSOP-8；SINGLE PHASE SYNCHRONOUS BUCK PWM CONTROLLER

Features ? Supply Voltage: 5V/12V VIN Input Range: 3.0V to 13.2V 0.6V/0.8V to 80 of VIN Output Range Internal Reference: 0.6V/0.8V ? Simple Single-Loop Control Voltage-Mode PWM Control Duty Cycle: 0 to 80 Fast Transient Response ? 10MHz High-Bandwidth Error Amplifier with 6V/μs Slew Rate

文件：756.12 Kbytes 頁數(shù)：13 Pages

DIODES

美臺半導體