絲?。?strong>3415；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The 3415A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：811.45 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：3415；Package：ST23-3；P-Channel Enhancement Mode Field Effect Transistor

Features: ● Low On-Resistance ● ESD protected ● High Power and Current Handing Capability ● Lead-Free,RoHS Compliant

文件：444.14 Kbytes 頁數(shù)：5 Pages

ADV

愛德微

絲印：3415；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

Features: ● Low On-Resistance ● ESD protected ● High Power and Current Handing Capability ● Lead-Free,RoHS Compliant

文件：1.07939 Mbytes 頁數(shù)：5 Pages

ADV

愛德微

絲印：3415；Package：SOT-23；Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ? Electrostatic Sensitive Devices. ? VDS (V) = -20V ? ID =-4 A ? RDS(ON)

文件：406.58 Kbytes 頁數(shù)：6 Pages

BILIN

銀河微電

絲?。?strong>3415；Package：SOT-23；P-Channel Mosfet

Product Summary VDS -20V,ID =-4A RDS(ON)

文件：974.92 Kbytes 頁數(shù)：3 Pages

TECHPUBLIC

臺舟電子

絲?。?strong>3415；Package：SOT-23；P-Channel Mosfet

Application @? Load/Power Switching ? Interfacing Switching ? Logic Level Shift

文件：995.08 Kbytes 頁數(shù)：3 Pages

TECHPUBLIC

臺舟電子

絲?。?strong>3415；Package：SOT-23；P-Channel Mosfet

Application Load/Power Switching Interfacing Switching Logic Level Shift

文件：2.17223 Mbytes 頁數(shù)：3 Pages

TECHPUBLIC

臺舟電子

絲?。?strong>3415；Package：SOT-23；P-Channel Enhancement Mode MOSFET

文件：1.57117 Mbytes 頁數(shù)：10 Pages

FUTUREWAFER

絲印：3415；Package：SOT-23；P-Channel MOSFET

文件：90.87 Kbytes 頁數(shù)：1 Pages

KEXIN

科信電子

絲?。?strong>3415；Package：SOT-23；P-Channel Enhancement MOSFET

文件：169.69 Kbytes 頁數(shù)：4 Pages

KEXIN

科信電子