絲?。?strong>3416；Package：ST23-3；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low On-Resistance ● ESD protected ● High Power and Current Handing Capability ● Lead-Free,RoHS Compliant

文件：354.64 Kbytes 頁數(shù)：4 Pages

ADV

愛德微

絲?。?strong>3416；Package：SOT-23；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features ESD≥2500HBM Application Lithium battery protection Wireless impact Mobile phone fast charging

文件：1.54106 Mbytes 頁數(shù)：5 Pages

YFWDIODE

佑風微

絲?。?strong>3416；Package：YFW3416MI；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features ESD=2500HBM Application Battery protection Load switch Uninterruptible power supply

文件：1.00569 Mbytes 頁數(shù)：5 Pages

YFWDIODE

佑風微

絲?。?strong>3416；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

文件：2.69484 Mbytes 頁數(shù)：7 Pages

FOSTER

福斯特半導體

絲?。?strong>3416；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

文件：877.74 Kbytes 頁數(shù)：7 Pages

HMSEMI

華之美半導體

絲印：3416；Package：SOT-23；LCE N-Channel Enhancement Mode Power MOSFET

文件：986.7 Kbytes 頁數(shù)：6 Pages

LEIDITECH

雷卯電子

絲印：3416；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

文件：1.17008 Mbytes 頁數(shù)：6 Pages

LEIDITECH

雷卯電子

絲?。?strong>3416；Package：SOT-23；N- Enhancement Mode Field Effect Transistor

文件：2.64182 Mbytes 頁數(shù)：7 Pages

PJSEMI

平晶半導體

絲?。?strong>3416；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

文件：174.48 Kbytes 頁數(shù)：7 Pages

RECTRON

麗正國際

PLASTI-GRIP Terminals & Splices

Key Features and Benefits ? Vinyl insulation sleeve provides good dielectric strength and supports the wire insulation so that no bare wire is exposed ? Most product is UL and CSA approved ? Most product rated to 105 degrees C, with an operating voltage of 600 V ? Insulation is 94V-0 rated ?

文件：2.49255 Mbytes 頁數(shù)：6 Pages

TEC

泰科電子