絲印：3401；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The 3401 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：832.47 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?strong>3401；Package：SOT-23；Plastic-Encapsulate MOSFETS

Features VDS (V) = -30V ID = -4.2 A (VGS = -10V) RDS(ON)

文件：843.06 Kbytes 頁數(shù)：5 Pages

GWSEMI

唯圣電子

絲?。?strong>3401；Package：SOT-23-3L；P-Channel Enhancement Mode Power MOSFET

Description The G3401L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：803.56 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?strong>3401；Package：SOT-23L；P-Channel Enhancement Mode MOSFET

Features Surface Mount Package Lead Free Product is Acquired High Power and Current Handing Capability Applications Load Switch PWM Applications Power Management

文件：3.6207 Mbytes 頁數(shù)：9 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲?。?strong>3401；Package：SOT23-3L；P-Channel Enhancement MOSFET

■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON)

文件：813.7 Kbytes 頁數(shù)：5 Pages

YFWDIODE

佑風(fēng)微

絲?。?strong>3401；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

文件：277.81 Kbytes 頁數(shù)：3 Pages

ADV

愛德微

絲印：3401；Package：SOT-23-3；P-Channel Enhancement Mode Power MOSFET

文件：1.6707 Mbytes 頁數(shù)：6 Pages

LUGUANG

魯光電子

絲?。?strong>3401；Package：SOT-23-3；P-Channel Enhancement Mode Power MOSFET

文件：1.6707 Mbytes 頁數(shù)：6 Pages

LUGUANG

魯光電子

絲印：3401；Package：SOT-23；SE P-Channel Enhancement Mode Power MOSFET

文件：1.11491 Mbytes 頁數(shù)：6 Pages

LEIDITECH

雷卯電子

絲?。?strong>3401；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

文件：576.85 Kbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子