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          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          DMG3402LQ

          絲印:3404B;Package:3404B;30V N-Channel Enhancement Mode MOSFET

          Description The DMG3402LQ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON)

          文件:2.52747 Mbytes 頁數(shù):5 Pages

          LEIDITECH

          雷卯電子

          DMN3028LQ

          絲?。?strong>3404B;Package:SOT-23;30V N-Channel Enhancement Mode MOSFET

          Description The DMN3028LQ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON)

          文件:2.52747 Mbytes 頁數(shù):5 Pages

          LEIDITECH

          雷卯電子

          IRLML0030

          絲?。?strong>3404B;Package:SOT-23;30V N-Channel Enhancement Mode MOSFET

          Description The IRLML0030 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON)

          文件:2.52747 Mbytes 頁數(shù):5 Pages

          LEIDITECH

          雷卯電子

          IRLML6346

          絲?。?strong>3404B;Package:SOT-23;30V N-Channel Enhancement Mode MOSFET

          Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The IRLML6346 uses advanced trench technology General Features VDS = 30V ID =4.2A RDS(ON)

          文件:2.52748 Mbytes 頁數(shù):5 Pages

          LEIDITECH

          雷卯電子

          NVTR4503N

          絲印:3404B;Package:SOT-23;30V N-Channel Enhancement Mode MOSFET

          Description The NVTR4503N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON)

          文件:2.52746 Mbytes 頁數(shù):5 Pages

          LEIDITECH

          雷卯電子

          PMV15ENEA

          絲?。?strong>3404B;Package:SOT-23;30V N-Channel Enhancement Mode MOSFET

          Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology PMV15ENEA General Features VDS = 30V ID =4.2A RDS(ON)

          文件:2.57297 Mbytes 頁數(shù):5 Pages

          LEIDITECH

          雷卯電子

          PMV19XNEA

          絲?。?strong>3404B;Package:SOT-23;30V N-Channel Enhancement Mode MOSFET

          Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology PMV19XNEA General Features VDS = 30V ID =4.2A RDS(ON)

          文件:2.52751 Mbytes 頁數(shù):5 Pages

          LEIDITECH

          雷卯電子

          SI2300DS

          絲?。?strong>3404B;Package:SOT-23;30V N-Channel Enhancement Mode MOSFET

          Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology Si2300DS General Features VDS = 30V ID =4.2A RDS(ON)

          文件:2.5275 Mbytes 頁數(shù):5 Pages

          LEIDITECH

          雷卯電子

          SQ2348ES

          絲?。?strong>3404B;Package:SOT-23;30V N-Channel Enhancement Mode MOSFET

          Description The SQ2348ES uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON)

          文件:2.52746 Mbytes 頁數(shù):5 Pages

          LEIDITECH

          雷卯電子

          YFW3404B

          絲?。?strong>3404B;Package:3404B;30V N-CHANNEL ENHANCEMENT MODE MOSFET

          Application Lithium battery protection Wireless impact Mobile phone fast charging

          文件:1.82526 Mbytes 頁數(shù):5 Pages

          YFWDIODE

          佑風微

          詳細參數(shù)

          • 型號:

            3404B

          • 制造商:

            SHENZHENFREESCALE

          • 制造商全稱:

            ShenZhen FreesCale Electronics. Co., Ltd

          • 功能描述:

            Automotive N-Channel 30 V(D-S) 175 ?°C MOSFET

          供應商型號品牌批號封裝庫存備注價格
          VISHAY/威世
          25+
          SOT-23
          20300
          VISHAY/威世原裝特價SQ2348ES即刻詢購立享優(yōu)惠#長期有貨
          詢價
          VISHAY/威世
          23+
          SOT-23
          100586
          全新原廠原裝正品現(xiàn)貨,可提供技術支持、樣品免費!
          詢價
          VISHAY
          2024+
          N/A
          70000
          柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
          詢價
          Vishay(威世)
          23+
          NA
          20094
          正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持
          詢價
          Vishay(威世)
          2021/2022+
          標準封裝
          6500
          原廠原裝現(xiàn)貨訂貨價格優(yōu)勢終端BOM表可配單提供樣品
          詢價
          24+
          N/A
          82000
          一級代理-主營優(yōu)勢-實惠價格-不悔選擇
          詢價
          VISHAY
          24+
          N/A
          8000
          全新原裝正品,現(xiàn)貨銷售
          詢價
          Vishay(威世)
          24+
          N/A
          11800
          可配單提供樣品
          詢價
          Vishay(威世)
          25+
          N/A
          8800
          公司只做原裝,詳情請咨詢
          詢價
          原廠
          24+
          N/A
          10000
          只做現(xiàn)貨
          詢價
          更多3404B供應商 更新時間2026-1-18 14:14:00
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