絲?。?strong>3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The 3400 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：815.51 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲印：3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The AO3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON)

文件：914.26 Kbytes 頁數(shù)：6 Pages

LEIDITECH

雷卯電子

絲?。?strong>3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON)

文件：899.48 Kbytes 頁數(shù)：6 Pages

LEIDITECH

雷卯電子

絲印：3400；Package：SOT-23；Plastic-Encapsulate MOSFETS

FEATURE High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability

文件：182.77 Kbytes 頁數(shù)：3 Pages

GWSEMI

唯圣電子

絲?。?strong>3400；Package：SOT-23；30V N-CHANNEL Enhancement Mode MOSFET

Features ? VDS=30V RDS(ON)=33mΩ @VGS=4.5V, ID=5A RDS(ON)=52mΩ @VGS=2.5V, ID=4A ? Low on-resistance ? Low gate charge ? Excellent thermal and electrical capabilities ? Compact and low profile SOT-23 package

文件：657.42 Kbytes 頁數(shù)：7 Pages

CYSTEKEC

全宇昕科技

絲印：3400；Package：SOT-23；The 3400 uses advanced trench technology to provide excellent RDS(ON)

文件：1.89155 Mbytes 頁數(shù)：6 Pages

LUGUANG

魯光電子

絲?。?strong>3400；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

文件：782.45 Kbytes 頁數(shù)：7 Pages

ADV

愛德微

絲?。?strong>3400；Package：SOT-23；N-Channel MOSFET uses advanced trench technology

文件：857.51 Kbytes 頁數(shù)：3 Pages

DOINGTER

杜因特

絲?。?strong>3400；Package：SOT-23-3；N-Channel MOSFET uses advanced trench technology

文件：877.73 Kbytes 頁數(shù)：3 Pages

DOINGTER

杜因特

絲?。?strong>3400；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

文件：861.3 Kbytes 頁數(shù)：6 Pages

FUTUREWAFER