絲印：340；Package：DO-214AA；SMD Schottky Barrier Diode

Features - AEC-Q101 Qualified. - High surge current capability. - Low reverse current. - High current capability.

文件：481.22 Kbytes 頁(yè)數(shù)：4 Pages

COMCHIP

典琦

絲?。?strong>340；Package：DO-214AB；SMD Schottky Barrier Rectifiers

Features -Built-in strain relief. -Silicon epitaxial planar chips. -High surge and current capability. -For use in low voltage, high frequency invertors free -wheeling and polarity protection. -Metal silicon junction with guard ring.

文件：99.34 Kbytes 頁(yè)數(shù)：4 Pages

COMCHIP

典琦

絲印：340；Package：SOD-323；1-Line Uni-directional TVS Diode

文件：527.44 Kbytes 頁(yè)數(shù)：8 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

應(yīng)能江蘇應(yīng)能微電子股份有限公司

絲?。?strong>340；Package：SOD-106；Schottky Barrier Rectifier

文件：275.11 Kbytes 頁(yè)數(shù)：5 Pages

KODENSHI

可天士

絲?。?a target="_blank" title="Marking" href="/3400/marking.html">3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The 3400 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：815.51 Kbytes 頁(yè)數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/3400l/marking.html">3400L；Package：SOT-23-3L；PWM applications

Description The 3400L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Application PWM applications Load switch Power

文件：1.62324 Mbytes 頁(yè)數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/3400/marking.html">3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The AO3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON)

文件：914.26 Kbytes 頁(yè)數(shù)：6 Pages

LEIDITECH

雷卯電子

絲?。?a target="_blank" title="Marking" href="/3400/marking.html">3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON)

文件：899.48 Kbytes 頁(yè)數(shù)：6 Pages

LEIDITECH

雷卯電子

絲?。?a target="_blank" title="Marking" href="/3400/marking.html">3400；Package：SOT-23；Plastic-Encapsulate MOSFETS

FEATURE High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability

文件：182.77 Kbytes 頁(yè)數(shù)：3 Pages

GWSEMI

唯圣電子

絲印：3400；Package：SOT-23；30V N-CHANNEL Enhancement Mode MOSFET

Features ? VDS=30V RDS(ON)=33mΩ @VGS=4.5V, ID=5A RDS(ON)=52mΩ @VGS=2.5V, ID=4A ? Low on-resistance ? Low gate charge ? Excellent thermal and electrical capabilities ? Compact and low profile SOT-23 package

文件：657.42 Kbytes 頁(yè)數(shù)：7 Pages

CYSTEKEC

全宇昕科技