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          首頁(yè) >310-E3>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          310-E3

          Tilt-To-Load Drum Tumblers Feature Power-Tilt to Enable Easy, Floor-Level Loading

          文件:2.27033 Mbytes 頁(yè)數(shù):6 Pages

          MORSE

          Morse Mfg. Co., Inc.

          310-E3-50

          Tilt-To-Load Drum Tumblers Feature Power-Tilt to Enable Easy, Floor-Level Loading

          文件:2.27033 Mbytes 頁(yè)數(shù):6 Pages

          MORSE

          Morse Mfg. Co., Inc.

          SIHFD310-E3

          Power MOSFET

          VDS (V) 400 RDS(on) (Ω) VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

          文件:1.25725 Mbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          SIHFR310-E3

          Power MOSFET

          DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

          文件:1.41713 Mbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          SIHFR310-E3

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

          文件:3.93309 Mbytes 頁(yè)數(shù):7 Pages

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          更多310-E3供應(yīng)商 更新時(shí)間2026-1-20 13:36:00
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