| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>302；Package：DSBGA；CSD13302W 12 V N Channel NexFET? Power MOSFET 1 Features 1? Ultra Low On Resistance ? Low Qg and Qgd ? Small Footprint 1 mm × 1 mm ? Low Profile 0.62 mm Height ? Pb Free ? RoHS Compliant ? Halogen Free 2 Applications ? Battery Management ? Load Switch ? Battery Protection 3 Description This 14.6 mΩ, 12 V, N-Channel device is 文件：548.23 Kbytes 頁數(shù)：11 Pages | TI 德州儀器 | TI | ||
絲印：302；Package：DSBGA；CSD13302W 12 V N Channel NexFET? Power MOSFET 1 Features 1? Ultra Low On Resistance ? Low Qg and Qgd ? Small Footprint 1 mm × 1 mm ? Low Profile 0.62 mm Height ? Pb Free ? RoHS Compliant ? Halogen Free 2 Applications ? Battery Management ? Load Switch ? Battery Protection 3 Description This 14.6 mΩ, 12 V, N-Channel device is 文件：548.23 Kbytes 頁數(shù)：11 Pages | TI 德州儀器 | TI | ||
絲?。?strong>302；Package：DSBGA；CSD13302W 12 V N Channel NexFET? Power MOSFET 1 Features 1? Ultra Low On Resistance ? Low Qg and Qgd ? Small Footprint 1 mm × 1 mm ? Low Profile 0.62 mm Height ? Pb Free ? RoHS Compliant ? Halogen Free 2 Applications ? Battery Management ? Load Switch ? Battery Protection 3 Description This 14.6 mΩ, 12 V, N-Channel device is 文件：548.23 Kbytes 頁數(shù)：11 Pages | TI 德州儀器 | TI | ||
絲?。?strong>302；Package：DSBGA；CSD13302W 12 V N Channel NexFET? Power MOSFET 1 Features 1? Ultra Low On Resistance ? Low Qg and Qgd ? Small Footprint 1 mm × 1 mm ? Low Profile 0.62 mm Height ? Pb Free ? RoHS Compliant ? Halogen Free 2 Applications ? Battery Management ? Load Switch ? Battery Protection 3 Description This 14.6 mΩ, 12 V, N-Channel device is 文件：548.23 Kbytes 頁數(shù)：11 Pages | TI 德州儀器 | TI | ||
絲?。?strong>302；Package：SOT-23；P-Channel 2.5 V (D-S) MOSFET Features ? –20 V, –2.4 A. RDS(ON) = 55m Ω @ VGS = –4.5 V RDS(ON) = 80 mΩ @ VGS = –2.5 V ? Fast switching speed ? High performance trench technology for extremely low RDS(ON) ? SuperSOTTM -3 provides low RDS(ON) and 30 higher power handling capability than SOT23 in the same footprint 文件：309.77 Kbytes 頁數(shù)：5 Pages | UMW 友臺半導(dǎo)體 | UMW | ||
絲印：302；Package：SOT-23；P-Channel 2.5 V (D-S) MOSFET General Description This P-Channel 2.5V has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications ? Power management ? Load switch ? Battery protection Features ? –20 V, –2.4 A. RDS(ON) = 55m Ω @ VGS = –4.5 V RDS(ON) = 文件：295.31 Kbytes 頁數(shù)：5 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲印：302；RoHS Compliant Halogen Free REACH Compliant 文件：1.3526 Mbytes 頁數(shù)：10 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲?。?strong>302；RoHS Compliant Halogen Free REACH Compliant 文件：1.3526 Mbytes 頁數(shù)：10 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲?。?strong>302；Package：WCSP9；28 V, Single input ??Single Output Load Switch IC with Over Voltage Protection 文件：399.01 Kbytes 頁數(shù)：11 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲?。?a target="_blank" title="Marking" href="/3021/marking.html">3021；WL-OCTR Optocoupler Triac General Information: Operating Temperature -40 °C up to +100 °C Storage Conditions (for single parts) -55 °C up to +125 °C Storage Conditions (in original packaging) 文件：2.08985 Mbytes 頁數(shù)：14 Pages | WURTHWurth Elektronik GmbH & Co. KG, Germany. 伍爾特伍爾特集團(tuán) | WURTH |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TI(德州儀器) |
24+ |
DSBGA-4 |
6824 |
只做原裝現(xiàn)貨假一罰十!價(jià)格最低!只賣原裝現(xiàn)貨 |
詢價(jià) | ||
TI |
25+23+ |
DSBGA-4 |
44091 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
TI |
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | |||
TI |
16+ |
DSBGA |
10000 |
原裝正品 |
詢價(jià) | ||
TI |
1501+ |
DSBGA-4 |
1545 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
TI |
24+ |
DSBGA-4 |
65200 |
一級代理/放心采購 |
詢價(jià) | ||
TI |
25+ |
4-BGA |
6675 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
TI(德州儀器) |
2021+ |
DSBGA-4 |
499 |
詢價(jià) | |||
TI/德州儀器 |
24+ |
DSBGA-4 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實(shí)單! |
詢價(jià) | ||
TI(德州儀器) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持 |
詢價(jià) |
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