Silicon N-Channel MOS FET (HF/VHF power amplifier)

Features · High breakdown voltage · You can decrease handling current. · Included gate protection diode · No secondary–breakdown · Wide area of safe operation · Simple bias circuitry · No thermal runaway Application HF/VHF power amplifier

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HITACHIHitachi Semiconductor

日立日立公司

SILICON N-CHANNEL MOS FET

DESCRIPTION: The ASI 2SK410 is a silicon n-channel mos fet designed for HF/VHF power amplifier applications. FEATURES: ? PG = 17 dB typ. at 100 W/28 MHz ? Omnigold? Metalization System ? Common Source configuration ? RoHS compliant

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ASI

SILICON N-CHANNEL MOS FET

DESCRIPTION:\nThe ASI 2SK410 is a silicon n-channel mos fet designed for HF/VHF power amplifier applications.FEATURES:\n? PG = 17 dB typ. at 100 W/28 MHz\n? Omnigold? Metalization System\n? Common Source configuration\n? RoHS compliant

ASI Semiconductor

Silicon N-Channel MOS FET

· High breakdown voltage\n· You can decrease handling current.\n· Included gate protection diode\n· No secondary–breakdown\n· Wide area of safe operation\n· Simple bias circuitry\n· No thermal runawayApplication\n? HF/VHF power amplifier?;

HITACHI

日立

N-Channel Silicon MOSFET General-Purpose Switching Device

Features ? Low ON-resistance, low input capacitance, ultrahigh-speed switching. ? Adoption of high reliability HVP process. ? Attachment workability is good by Mica-less package. ? Avalanche resistance guarantee.

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SANYO

三洋

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features ? Low ON-resistance, low input capacitance, ultrahigh-speed switching. ? Adoption of high reliability HVP process. ? Attachment workability is good by Mica-less package. ? Avalanche resistance guarantee.

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SANYO

三洋

絲?。?a target="_blank" title="Marking" href="/k4101/marking.html">K4101；Package：TO-220F-3FS；General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features ?Low ON-resistance. ?High-speed switching. ?10V drive. ? Avalanche resistance guarantee.

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SANYO

三洋

N-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features ? Low ON-resistance, low input capacitance, ultrahigh-speed switching. ? High reliability (Adoption of HVP process). ? Attachment workability is good by Mica-less package. ? Avalanche resistance guarantee.

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SANYO

三洋

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

東芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

Switching Regulator Applications ? Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) ? High forward transfer admittance: |Yfs| = 8.5 S (typ.) ? Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) ? Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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TOSHIBA

東芝