SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4082 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ? Low on-state resistance RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 1.8 A

文件：188.66 Kbytes 頁數(shù)：7 Pages

NEC

瑞薩

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4082 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ? Low on-state resistance RDS(on

文件：1.16899 Mbytes 頁數(shù)：9 Pages

RENESAS

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isc N-Channel MOSFET Transistor

文件：324.13 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel 650 V (D-S) MOSFET

文件：1.08667 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

SWITCHING N-CHANNEL POWER MOS FET

Renesas

瑞薩

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4082 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ? Low on-state resistance RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 1.8 A

文件：188.66 Kbytes 頁數(shù)：7 Pages

NEC

瑞薩

N-Channel 650 V (D-S) MOSFET

FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC

文件：1.08675 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4082 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ? Low on-state resistance RDS(on

文件：1.16899 Mbytes 頁數(shù)：9 Pages

RENESAS

瑞薩