N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK3653B is suitable for converter of ECM. General-purpose product. FEATURES ? Low noise: ?108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 k?) ? Especially suitable for audio and telephone ? Super thin thickness package: t = 0.37 mm TYP.

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NEC

瑞薩

JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3653C contains a diode and high resistivity between its gates and sources, for achieving short stability time during power-on. In addition, because of its compact package and low noise, the 2SK3653C is especially suitable for compact ECMs for audio or mobile devices such as cel

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NEC

瑞薩

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3653C contains a diode and high resistivity between its gates and sources, for achieving short stability time during power-on. In addition, because of its compact package and low noise, the

文件：277.62 Kbytes 頁(yè)數(shù)：7 Pages

RENESAS

瑞薩

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

東芝

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES ?4.5V d

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RENESAS

瑞薩

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

無錫固電

SWITCHING N-CHANNEL POWER MOSFET

The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

文件：77.2 Kbytes 頁(yè)數(shù)：8 Pages

NEC

瑞薩

Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications

文件：679.21 Kbytes 頁(yè)數(shù)：5 Pages

TOSHIBA

東芝

N-CHANNEL SILICON POWER MOSFET

文件：261 Kbytes 頁(yè)數(shù)：4 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

文件：261 Kbytes 頁(yè)數(shù)：4 Pages

FUJI

富士通