N CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS)

For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications High breakdown voltage: VGDS= ?50 V High input impedance: IGSS= ?1.0 nA (max) (VGS= ?30 V) Low RDS (ON): RDS (ON)= 80 ?(typ.) (IDSS= 5 mA) Small package

文件：223.16 Kbytes 頁(yè)數(shù)：4 Pages

TOSHIBA

東芝

Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications

文件：679.21 Kbytes 頁(yè)數(shù)：5 Pages

TOSHIBA

東芝

Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications

Toshiba

東芝

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：327.13 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：400.83 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：400.97 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 100mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：318.62 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無錫固電

N-channel Enhancement Mode MOSFET

Features ? Low on-resistance, low Qg ? High avalanche resistance ? For high-speed switching

文件：42.77 Kbytes 頁(yè)數(shù)：2 Pages

KEXIN

科信電子

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3653 is suitable for converter of ECM. FEATURES ? Compact package ? High forward transfer admittance 1000 μS TYP. (IDSS = 100 μA) 1600 μS TYP. (IDSS = 200 μA) ? Includes diode and high

文件：187.74 Kbytes 頁(yè)數(shù)：8 Pages

RENESAS

瑞薩

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3653B is suitable for converter of ECM. General-purpose product. FEATURES ? Low noise: ?108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) ? Especially suitable for audio and telephone

文件：294.19 Kbytes 頁(yè)數(shù)：7 Pages

RENESAS

瑞薩