SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance: RDS(on)1 = 11 m? MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 m? MAX. (VGS = 4.5 V, ID = 42 A) ? Low Ciss: Ciss = 11000 pF TYP. ? Bu

文件：76.82 Kbytes 頁數(shù)：8 Pages

NEC

瑞薩

MOS FIELD EFFECT TRANSISTOR

文件：213.2 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

isc N-Channel MOSFET Transistor

文件：327.13 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

文件：401.28 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

SWITCHING N-CHANNEL POWER MOS FET

文件：213.2 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

isc N-Channel MOSFET Transistor

文件：401.41 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications.FEATURES\n? Super low on-state resistance:\n? RDS(on)1 = 11 m? MAX. (VGS = 10 V, ID = 42 A)\n? RDS(on)2 = 13 m? MAX. (VGS = 4.5 V, ID = 42 A)\n? Low Ciss: Ciss = 11000 pF TYP.\n? Built- ? Super low on-state resistance:\n? RDS(on)1 = 11 m? MAX. (VGS = 10 V, ID = 42 A)\n? RDS(on)2 = 13 m? MAX. (VGS = 4.5 V, ID = 42 A)\n? Low Ciss: Ciss = 11000 pF TYP.\n? Built-in gate protection diode;

Renesas

瑞薩

Nch Single Power Mosfet 100V 83A 11Mohm Mp-25Z/To-220Smd

The 2SK3479-Z is a Nch Single Power Mosfet 100V 83A 11Mohm Mp-25Z/To-220Smd. ? Super low on-state resistance: RDS(on)1 = 11 m? MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 m? MAX. (VGS = 4.5 V, ID = 42 A)\n? Low Ciss : Ciss = 11000 pF TYP.\n? Built-in gate protection diode\n文檔文檔標(biāo)題類型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語應(yīng)用文檔2021年4月16日2SK3479 Data SheetPDF207 ;

Renesas

瑞薩