MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3482 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A) ? Low Ci

文件：250.46 Kbytes 頁數(shù)：10 Pages

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Nch Single Power Mosfet 100V 36A 33Mohm Mp-3/To-251

The 2SK3482 is a Nch Single Power Mosfet 100V 36A 33Mohm Mp-3/To-251. ? Low on-state resistanceRDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A)RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A)\n? Low Ciss : Ciss = 3600 pF TYP.\n? Built-in gate protection diode\n? TO-251/TO-252 package;

Renesas

瑞薩

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3482 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A) ? Low Ci

文件：250.46 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

SWITCHING N-CHANNEL POWER MOS FET

文件：251.05 Kbytes 頁數(shù)：10 Pages

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isc N-Channel MOSFET Transistor

文件：332.07 Kbytes 頁數(shù)：2 Pages

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無錫固電