MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3433 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance: RDS(on)1 = 26mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 41mΩ MAX. (VGS = 4.0 V, ID = 20 A) ? L

文件：213.51 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

MOS FIELD EFFECT TRANSISTOR

文件：214.09 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

isc N-Channel MOSFET Transistor

文件：326.32 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

文件：400.47 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SK3433 is N-channel MOS Field Effect Transistor designed for high current switching applications.FEATURES\n?Super low on-state resistance:\nRDS(on)1= 26 m? MAX. (VGS= 10 V, ID= 20 A)\nRDS(on)2= 41 m? MAX. (VGS= 4.0 V, ID= 20 A)\n?Low Ciss: Ciss= 1500 pF TYP.\n?Built-in gate protect ?Super low on-state resistance:\n?Low Ciss: Ciss= 1500 pF TYP.\n?Built-in gate protection diode;

Renesas

瑞薩

Nch Single Power Mosfet 60V 40A 26Mohm Mp-25Z/To-220Smd

The 2SK3433-Z is a Nch Single Power Mosfet 60V 40A 26Mohm Mp-25Z/To-220Smd. ? Super low on-state resistance: RDS(on)1 = 26 m? MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 41 m? MAX. (VGS = 4.0 V, ID = 20 A)\n? Low Ciss : Ciss = 1500 pF TYP.\n? Built-in gate protection diode\n文檔文檔標(biāo)題類型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語應(yīng)用文檔 2021年4月16日2SK3433 Data SheetPDF208 ;

Renesas

瑞薩