SWITCHING N-CHANNEL POWER MOSFET

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ★? Low gate charge : QG= 15 nC TYP.

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NEC

瑞薩

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ? Low gate charge : QG = 15

文件：250.94 Kbytes 頁(yè)數(shù)：10 Pages

RENESAS

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MOS Field Effect Transistor

Features ● Low gate charge QG = 15 nC TYP. (VDD = 450V, VGS = 10 V, ID = 5.5A) ● Gate voltage rating ±30 V ● Low on-state resistance RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.8A) ● Avalanche capability ratings

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KEXIN

科信電子

N-Channel 650 V (D-S) MOSFET

FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC

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VBSEMI

微碧半導(dǎo)體

isc N-Channel MOSFET Transistor

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ISC

無(wú)錫固電

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FETDESCRIPTION\nThe 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.\nFEATURES\n★? Low gate charge : QG= 15 nC TYP. (VDD= ★? Low gate charge : QG= 15 nC TYP. (VDD= 450 V, VGS= 10 V, ID= 5.5 A)\n? Gate voltage rating : ±30 V\n? Low on-state resistance : RDS(on)= 2.2 ? MAX. (VGS= 10 V, ID= 2.8 A)\n? Avalanche capability ratings\n? Surface mount package available;

Renesas

瑞薩

SWITCHING N-CHANNEL POWER MOSFET

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ★? Low gate charge : QG= 15 nC TYP.

文件：91.1 Kbytes 頁(yè)數(shù)：8 Pages

NEC

瑞薩

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ? Low gate charge : QG = 15

文件：250.94 Kbytes 頁(yè)數(shù)：10 Pages

RENESAS

瑞薩

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ? Low gate charge : QG = 15

文件：250.94 Kbytes 頁(yè)數(shù)：10 Pages

RENESAS

瑞薩

SWITCHING N-CHANNEL POWER MOSFET

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ★? Low gate charge : QG= 15 nC TYP.

文件：91.1 Kbytes 頁(yè)數(shù)：8 Pages

NEC

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