SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES ? Low on-resistance RDS(on)1= 14 m?(MAX.) (VGS= 10 V, ID= 15 A) RDS(on)2= 21 m?(MAX.) (VGS= 4.5 V, ID= 15 A) RDS(on)3= 29 m?(MA

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SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES ? Low on-resistance RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 1

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The 2SK3365 is a Nch Single Power Mosfet 30V 30A 14Mohm Mp-3/To-251. ? Low on-resistance RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A) RDS(on)3 = 29 mΩ (MAX.) (VGS = 4.0 V, ID = 15 A)\n? Low Ciss : Ciss = 1300 pF (TYP.)\n? Built-in gate protection diode\n文檔文檔標(biāo)題類型日期Attention of Handling Semiconductor DevicesPDF648 KB日;

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SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES ? Low on-resistance RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 1

文件：233.39 Kbytes 頁數(shù)：9 Pages

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES ? Low on-resistance RDS(on)1= 14 m?(MAX.) (VGS= 10 V, ID= 15 A) RDS(on)2= 21 m?(MAX.) (VGS= 4.5 V, ID= 15 A) RDS(on)3= 29 m?(MA

文件：63.52 Kbytes 頁數(shù)：8 Pages

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