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                >FSS>規(guī)格書列表
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    FSS23A4D3
    7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
    
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul
    文件：46.88 Kbytes 頁數(shù)：8 Pages
    INTERSIL
    

    FSS23A4R
    7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
    
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul
    文件：46.88 Kbytes 頁數(shù)：8 Pages
    INTERSIL
    

    FSS23A4R1
    7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
    
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul
    文件：46.88 Kbytes 頁數(shù)：8 Pages
    INTERSIL
    

    FSS23A4R3
    7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
    
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul
    文件：46.88 Kbytes 頁數(shù)：8 Pages
    INTERSIL
    

    FSS23A4R4
    7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
    
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul
    文件：46.88 Kbytes 頁數(shù)：8 Pages
    INTERSIL
    

    FSS242
    DC/DC Converter Applications
    
Features
? Low ON resistance.
? 4V drive.
? Ultrahigh-speed switching.
    文件：41.92 Kbytes 頁數(shù)：4 Pages
    SANYO
    三洋
    

    FSS244
    DC / DC Converter Applications
    
Features
? Low ON-resistance.
? 4V drive.
? Ultrahigh speed switching.
    文件：28.62 Kbytes 頁數(shù)：4 Pages
    SANYO
    三洋
    

    FSS245
    N-Channel Silicon MOSFET General-Purpose Switching Device
    
Features
? Motor drive applications.
? Inverter drive applications.
? 4V drive.
    文件：53.09 Kbytes 頁數(shù)：4 Pages
    SANYO
    三洋
    

    FSS248
    N-Channel Silicon MOSFET General-Purpose Switching Device
    
Features
? Motor drive applications.
? Inverter drive applications.
? 4V drive.
    文件：53.68 Kbytes 頁數(shù)：4 Pages
    SANYO
    三洋
    

    FSS250
    DC/DC Converter Applications
    
Features
? Low ON resistance.
? 4V drive.
? Ultrahigh-speed switching.
    文件：41.7 Kbytes 頁數(shù)：4 Pages
    SANYO
    三洋
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • Supply Voltage：
      3.3 V min.
    • Sensitivity：
      6.6 mV/V/N min.
    
            
    
        
    
            
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            更新時間2026-1-20 17:50:00
        
    
        
    
          
    
            
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