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首頁 >FSS>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
FSS239	文件：28.35 Kbytes Page：4 Pages	Load Switching Applications Features ? Low ON resistance. ? 2.5V drive. 文件：28.35 Kbytes 頁數(shù)：4 Pages	SANYO 三洋	SANYO
FSS23A0D	文件：56.72 Kbytes Page：8 Pages	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：56.72 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSS23A0D1	文件：56.72 Kbytes Page：8 Pages	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：56.72 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSS23A0D3	文件：56.72 Kbytes Page：8 Pages	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：56.72 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSS23A0R	文件：56.72 Kbytes Page：8 Pages	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：56.72 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSS23A0R1	文件：56.72 Kbytes Page：8 Pages	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：56.72 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSS23A0R3	文件：56.72 Kbytes Page：8 Pages	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：56.72 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSS23A0R4	文件：56.72 Kbytes Page：8 Pages	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：56.72 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSS23A4D	文件：46.88 Kbytes Page：8 Pages	7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件：46.88 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSS23A4D1	文件：46.88 Kbytes Page：8 Pages	7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件：46.88 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL

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技術(shù)參數(shù)

Supply Voltage：
3.3 V min.
Sensitivity：
6.6 mV/V/N min.

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市毅創(chuàng)騰電子科技有限公司	FSS242-TL		23+	SOP/8	7000	絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!	詢價(jià)
深圳市福田區(qū)綠盛電子商行	FSS202-PM-TL	SANYO	2015+	SMD/DIP	19889	一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	FSSD06BQX	FSC	17+	QFN	6200	100%原裝正品現(xiàn)貨	詢價(jià)
深圳市益百分電子有限公司	FSS131-TL	SANYO	02+	SOP8	2600	全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	FSS804-M-TL-E	SANYO	23+	SOP8	52000	原裝正品,假一罰十	詢價(jià)
深圳市歐立現(xiàn)代科技有限公司	FSS139-MAX-TLD	SANYO	24+	SOP8P	6980	原裝現(xiàn)貨,可開13%稅票	詢價(jià)
深圳市利加科技有限公司	FSSD06UMX	FAIRCHILD	16+	NA	8800	原裝現(xiàn)貨,貨真價(jià)優(yōu)	詢價(jià)
深圳市一線半導(dǎo)體有限公司	FSS234-TL-E	FSC	24+	SO-8	5000		詢價(jià)
深圳市福安甌科技有限公司	FSS202-FM-TL	N/A	25+	SOP8	1000	強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢!	詢價(jià)
諦輝(北京/上海/青島 )電子科技有限公司	FSS138-TL-E	SANYO	25+	標(biāo)準(zhǔn)封裝	18000	原廠直接發(fā)貨進(jìn)口原裝	詢價(jià)

更多FSS供應(yīng)商更新時(shí)間2026-1-20 17:50:00

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