Silicon N Channel MOS FET High Speed Power Switching

Features ? Low on-resistance: RDS (on) = 0.65 ? typ. ? Low leakage current: IDSS = 1 μA max (at VDS = 500 V) ? High speed switching: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A) ? Low gate charge: Qg = 25 nC typ (at VDD = 400 V, VGS = 10 V, ID = 8 A) ? Avalanche ratings

文件：210.09 Kbytes 頁(yè)數(shù)：9 Pages

RENESAS

瑞薩

Silicon N Channel MOS FET High Speed Power Switching

Features ? Low on-resistance: RDS (on) = 0.65 ? typ. ? Low leakage current: IDSS = 1 μA max (at VDS = 500 V) ? High speed switching: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A) ? Low gate charge: Qg = 25 nC typ (at VDD = 400 V, VGS = 10 V, ID = 8 A) ? Avalanche ratings

文件：210.09 Kbytes 頁(yè)數(shù)：9 Pages

RENESAS

瑞薩

isc N-Channel MOSFET Transistor

文件：323.36 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

2SK3234

Features ? Low on-resistance: RDS (on) = 0.65 Ω typ. ? Low drain blocking current: IDSS = 1 μA max (at VDS = 500 V) ? Fast switching speed: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A) ? Low input dynamic capacity (Qg): Qg = 25 nC typ (VDD = 400 V, VGS = 10 V, ID = 8 A) ? Avalanche W

文件：133.35 Kbytes 頁(yè)數(shù)：9 Pages

HITACHIHitachi Semiconductor

日立日立公司