SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Description The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. Features ? Low gate charge QG = 26 nC TYP. (VDD = 450 V, VGS = 10

文件：69.68 Kbytes 頁數(shù)：8 Pages

NEC

瑞薩

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES · Low gate charge

文件：235.53 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

isc N-Channel MOSFET Transistor

文件：323.15 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel 6 50V (D-S) Power MOSFET

文件：1.10591 Mbytes 頁數(shù)：10 Pages

VBSEMI

微碧半導(dǎo)體

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Renesas

瑞薩

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3115B is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ? Low gate charge QG = 21 nC

文件：351.31 Kbytes 頁數(shù)：9 Pages

RENESAS

瑞薩

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3115B is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ? Low gate charge QG = 21 nC

文件：351.31 Kbytes 頁數(shù)：9 Pages

RENESAS

瑞薩