N-Channel Plastic-Encapsulate Transistor

Features ? Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) ? Low ON-Resistance ? Low voltage drive makes this device ideal for portable equipment ? Fast Switching Speed ? Easily designed drive circuits ? Easy to parallel ? Available in Lead

文件：578.56 Kbytes 頁數(shù)：4 Pages

MCC

絲?。?a target="_blank" title="Marking" href="/tl/marking.html">TL；Package：EMT3；Small switching (30V, 0.1A)

Small switching (30V, 0.1A)
Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA)
Structure S

文件：87.75 Kbytes 頁數(shù)：5 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/kn/marking.html">KN；Package：EMT3；2.5V Drive Nch MOS FET

Small switching (30V, 0.1A)
Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA)
Structure S

文件：78.75 Kbytes 頁數(shù)：4 Pages

ROHM

羅姆

N-Channel 30-V(D-S) MOSFET

zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) ESD protected 2KV HBM zApplications Interfacing, switching (30V, 100mA)

文件：2.72725 Mbytes 頁數(shù)：4 Pages

TUOFENG

拓鋒半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/kna/marking.html">KNA；Package：SOT-523；SOT-523 Plastic-Encapsulate MOSFETS

FEATURE Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Portable equipment Easily designed drive circuits Easy to parallel

文件：2.66884 Mbytes 頁數(shù)：5 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/kn/marking.html">KN；Package：EMT3F；2.5V Drive Nch MOSFET

Features 1) High-speed switching. 2) Low voltage drive(2.5V drive). 3) Drive circuits can be simple. 4) Parallel use is easy.

文件：959.93 Kbytes 頁數(shù)：6 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/kn/marking.html">KN；Package：SOT-523；Plastic-Encapsulate MOSFETS

FEATURE Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Easily designed drive circuits Easy to parallel Portable equipment APPLICATION Interfacing , Switching

文件：361.32 Kbytes 頁數(shù)：4 Pages

GWSEMI

唯圣電子

絲?。?a target="_blank" title="Marking" href="/kn/marking.html">KN；Package：EMT3；2.5V Drive Nch MOS FET

Small switching (30V, 0.1A)
Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA)
Structure S

文件：78.75 Kbytes 頁數(shù)：4 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/tgr/marking.html">TGR；Package：TO-236；N CHANNEL MOS TYPE (FM TUNER, VHF RF AMPLIFIER APPLICATIONS)

FM Tuner, VHF RF Amplifier Applications Low reverse transfer capacitance: Crss= 0.035 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: Gps= 28dB (typ.) Recommend operation voltage: 5~15 V

文件：252.35 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

Silicon N-Channel Power F-MOS FET

■Features ●Avalanche energy capacity guaranteed ●High-speed switching ●Low ON-resistance ●No secondary breakdown ●Low-voltage drive ●High electrostatic breakdown voltage ■Applications ●Contactless relay ●Diving circuit for a solenoid ●Driving circuit for a motor

文件：24.2 Kbytes 頁數(shù)：1 Pages

PANASONIC

松下