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    2SK30
    SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
    
DESCRIPTION

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.


FEATURES

? Super Low On-State Resistance

RDS(on)1 = 17 m? MAX. (VGS = 10 V, ID = 28 A)

RDS(on)2 = 27 m? MAX. (VGS = 4.0 V, ID = 28 A)

? Low Ciss : Ciss = 2100 pF 
    文件：72.37 Kbytes 頁(yè)數(shù)：8 Pages
    NEC
    瑞薩
    

    2SK30
    Silicon N Channel MOS FET High Speed Power Switching
    
Features

?  Low on-resistance

RDS(on)= 6 m?typ.

?  Low drive current

?  4 V gate drive device can be driven from 5 V source
    文件：52.09 Kbytes 頁(yè)數(shù)：10 Pages
    HITACHIHitachi Semiconductor
    日立日立公司
    

    2SK30
    Silicon N-Channel Power F-MOS FET
    
■ Features
● Avalanche energy capacity guaranteed
● High-speed switching
● Low ON-resistance
● No secondary breakdown
■ Applications
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
    文件：34.97 Kbytes 頁(yè)數(shù)：2 Pages
    PANASONIC
    松下
    

    2SK30
    Low-Frequency Amp Applications?
    
Low-Frequency Amplifier Applications
Features
? Ideal for potentiometers, analog switches, low frequency amplifiers, and constant-current regulators.
    文件：70.31 Kbytes 頁(yè)數(shù)：3 Pages
    SANYO
    三洋
    

    2SK30
    N CHANNEL MOS TYPE (FM TUNER, VHF RF AMPLIFIER APPLICATIONS)
    
FM Tuner, VHF RF Amplifier Applications


Low reverse transfer capacitance: Crss= 0.035 pF (typ.)

Low noise figure: NF = 1.7dB (typ.)

High power gain: Gps= 28dB (typ.)

Recommend operation voltage: 5~15 V
    文件：252.35 Kbytes 頁(yè)數(shù)：6 Pages
    TOSHIBA
    東芝
    

    2SK30
    Silicon N-Channel Power F-MOS FET
    Panasonic
    松下
    

    2SK30
    SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
    Renesas
    瑞薩
    

    2SK30
    N CHANNEL MOS TYPE (FM TUNER, VHF RF AMPLIFIER APPLICATIONS)
    Toshiba
    東芝
    

    2SK300
    2SK300
    

    文件：82.4 Kbytes 頁(yè)數(shù)：2 Pages
    SONYSony Corporation
    索尼
    

    2SK3000
    Silicon N Channel MOS FET Low Frequency Power Switching
    
Features
?  Low on-resistance
RDS(on)= 0. 25? typ. (VGS= 10 V, ID= 450 mA)
?  4V gate drive devices.
?  Small package (MPAK)
?  Expansive drain to source surge power capability
    文件：47.5 Kbytes 頁(yè)數(shù)：8 Pages
    HITACHIHitachi Semiconductor
    日立日立公司
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • Vgs (off) (V) max.：
      2.1
    • Nch/Pch：
      Nch
    • VGSS (V)：
      10
    • Number of Channels：
      Single
    • Pch (W)：
      0.4
    • Configuration [Device]：
      Built-In SBD
    • Application：
      Low Voltage General Switching
    • VDSS (V) max.：
      40
    • Mounting Type：
      Surface Mount
    • ID (A)：
      1
    • Package Type：
      MPAK/SC-59
    • RDS (ON) (mohm) max. @4V or 4.5V：
      500
    • Production Status：
      Non-promotion
    • RDS (ON) (mohm) max. @10V or 8V：
      300
    • Ordering Condition：
      Large order only
    • Ciss (pF) typ.：
      14
    
            
    
        
    
            
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    TOS
    		

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    TO92
    		

    1500
    		

    絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)!
    		
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    TOSHIBA
    		

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            更新時(shí)間2026-1-22 10:50:00
        
    
        
    
          
    
            
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