| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2164 is a single power transistor developed especially for high hFE. This transistor is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Dar 文件：128.05 Kbytes 頁數(shù)：6 Pages | NEC 瑞薩 | NEC | ||
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially for high hFE. This transistor is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Dar 文件：118.5 Kbytes 頁數(shù)：5 Pages | NEC 瑞薩 | NEC | ||
SILICON POWER TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING 文件：240.49 Kbytes 頁數(shù)：7 Pages | RENESAS 瑞薩 | RENESAS | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION ? High DC Current Gain- : hFE= 800(MIN)@ (VCE= 5V, IC= 1A) ? Low Collector-Emitter Saturation Voltage : VCE(sat) =1V(MIN)@ (IC = 3V, IB= 30mA) ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Designed for use low frequ 文件：194.67 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Low VCE(sat) Transistor(Strobe flash) Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. Structure Epitaxial planar type NPN silicon transistor 文件：159.27 Kbytes 頁數(shù)：4 Pages | ROHM 羅姆 | ROHM | ||
Low VCE(sat) Transistor(Strobe flash) Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. Structure Epitaxial planar type NPN silicon transistor 文件：159.27 Kbytes 頁數(shù)：4 Pages | ROHM 羅姆 | ROHM | ||
Low VCE(sat) Transistor(Strobe flash) Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. Structure Epitaxial planar type NPN silicon transistor 文件：159.27 Kbytes 頁數(shù)：4 Pages | ROHM 羅姆 | ROHM | ||
絲?。?a target="_blank" title="Marking" href="/t100/marking.html">T100；Package：MPT3；Power Transistor (31/-4V, 2A)
文件：68.23 Kbytes 頁數(shù)：3 Pages | ROHM 羅姆 | ROHM | ||
絲?。?a target="_blank" title="Marking" href="/t100/marking.html">T100；Package：MPT3；Power Transistor (60V, 3A)
文件：43.04 Kbytes 頁數(shù)：1 Pages | ROHM 羅姆 | ROHM | ||
SILICON POWER TRANSISTOR 文件：235.71 Kbytes 頁數(shù)：8 Pages | RENESAS 瑞薩 | RENESAS |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-N+Darl+Di
- 性質：
低頻或音頻放大 （LF）_開關管 （S）_功率放大 （L
- 封裝形式：
直插封裝
- 極限工作電壓：
150V
- 最大電流允許值：
10A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
2SD1591,2SD1830,2SD2105,
- 最大耗散功率：
30W
- 放大倍數(shù)：
β=6000
- 圖片代號：
B-38
- vtest：
150
- htest：
999900
- atest：
10
- wtest：
30
技術參數(shù)
- NPN/PNP：
NPN
- Vcbo (V)：
150
- VCEO (V)：
100
- Vebo (V)：
8
- Automotive：
YES
- IC (A) @25 °C：
10
- VCE(sat) (V) max.：
1.5
- hFE min.：
1000
- hFE max.：
30000
- Pc (W)：
30
- Package Type：
MP-45F
- Production Status：
EOL
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NA |
NA |
NA |
7788 |
原裝現(xiàn)貨/一站式配單配套 |
詢價 | ||
NEC |
17+ |
TO-220 |
31518 |
原裝正品 可含稅交易 |
詢價 | ||
PANASONIC |
24+ |
60000 |
詢價 | ||||
NEC |
24+ |
4326 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | |||
NEC |
24+ |
6540 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | |||
NEC |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
23+ |
TO |
20000 |
正品原裝貨價格低 |
詢價 | |||
KEC |
25+ |
TO-TO-220F |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
NEC |
24+ |
TO-220F |
60000 |
全新原裝現(xiàn)貨 |
詢價 | ||
NEC |
25+ |
TO-220F |
8880 |
原裝認準芯澤盛世！ |
詢價 |
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