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首頁 >2SD216>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
2SD2161	文件：130.02 Kbytes Page：6 Pages	NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipm 文件：130.02 Kbytes 頁數(shù)：6 Pages	NEC 瑞薩	NEC
2SD2161	文件：281.82 Kbytes Page：8 Pages	SILICON POWER TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA eq 文件：281.82 Kbytes 頁數(shù)：8 Pages	RENESAS 瑞薩	RENESAS
2SD2161	文件：194.56 Kbytes Page：2 Pages	isc Silicon NPN Darlington Power Transistor DESCRIPTION ? Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ? High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A) ? Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 2A, IB= 2mA) APPLICATIONS ? Designed for low-frequency power amplifiers and low-spee 文件：194.56 Kbytes 頁數(shù)：2 Pages	ISC 無錫固電	ISC
2SD2162	文件：273.24 Kbytes Page：2 Pages	isc Silicon NPN Darlington Power Transistor DESCRIPTION ? High hFE due to Darlington connection : HFE ≥ 2,000 @(VCE = 2.0 V, IC = 3.0 A) ? Low Collector Saturation Voltage- : VCE(sat) ≤1.5V @ (IC=3A, IB= 3mA) ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Designed for low 文件：273.24 Kbytes 頁數(shù)：2 Pages	ISC 無錫固電	ISC
2SD2162	文件：235.71 Kbytes Page：8 Pages	SILICON POWER TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA 文件：235.71 Kbytes 頁數(shù)：8 Pages	RENESAS 瑞薩	RENESAS
2SD2162	文件：112.1 Kbytes Page：6 Pages	NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipm 文件：112.1 Kbytes 頁數(shù)：6 Pages	NEC 瑞薩	NEC
2SD2163	文件：97.18 Kbytes Page：4 Pages	NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct driving from the IC output of devices such a 文件：97.18 Kbytes 頁數(shù)：4 Pages	NEC 瑞薩	NEC
2SD2163	文件：250.57 Kbytes Page：6 Pages	DARLINGTON POWER TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct driving from the IC output of devices su 文件：250.57 Kbytes 頁數(shù)：6 Pages	RENESAS 瑞薩	RENESAS
2SD2163	文件：265.84 Kbytes Page：2 Pages	isc Silicon NPN Darlington Power Transistor DESCRIPTION ? High DC Current Gain- : hFE = 1000(Min)@ IC= 10A ? Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Be ideal for direct driving from the IC output of devi 文件：265.84 Kbytes 頁數(shù)：2 Pages	ISC 無錫固電	ISC
2SD2164	文件：280.45 Kbytes Page：8 Pages	SILICON POWER TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2164 is a single power transistor developed especially for high hFE. This transistor is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of 文件：280.45 Kbytes 頁數(shù)：8 Pages	RENESAS 瑞薩	RENESAS

晶體管資料

型號(hào)：
2SD2163
別名：
三極管、晶體管、晶體三極管
生產(chǎn)廠家：
制作材料：
Si-N+Darl+Di
性質(zhì)：
低頻或音頻放大（LF）_開關(guān)管（S）_功率放大（L
封裝形式：
直插封裝
極限工作電壓：
150V
最大電流允許值：
10A
最大工作頻率：
<1MHZ或未知
引腳數(shù)：
3
可代換的型號(hào)：
2SD1591,2SD1830,2SD2105,
最大耗散功率：
30W
放大倍數(shù)：
β=6000
圖片代號(hào)：
B-38
vtest：
150
htest：
999900
atest：
10
wtest：
30

技術(shù)參數(shù)

NPN/PNP：
NPN
Vcbo (V)：
150
VCEO (V)：
100
Vebo (V)：
8
Automotive：
YES
IC (A) @25 °C：
10
VCE(sat) (V) max.：
1.5
hFE min.：
1000
hFE max.：
30000
Pc (W)：
30
Package Type：
MP-45F
Production Status：
EOL

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市信佳源電子有限公司	2SD2163	NA	NA	NA	7788	原裝現(xiàn)貨/一站式配單配套	詢價(jià)
深圳市河鋒鑫科技有限公司	2SD2163	NEC	17+	TO-220	31518	原裝正品可含稅交易	詢價(jià)
深圳市一線半導(dǎo)體有限公司	2SD2163	PANASONIC	24+		60000		詢價(jià)
深圳市豪邁興電子有限公司	2SD2163	NEC	24+		4326	公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存!	詢價(jià)
深圳市億智騰科技有限公司	2SD2163	NEC	24+		6540	原裝現(xiàn)貨/歡迎來電咨詢	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	2SD2163	NEC	23+	TO-220F	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市旺財(cái)半導(dǎo)體有限公司	2SD2163		23+	TO	20000	正品原裝貨價(jià)格低	詢價(jià)
深圳市宏捷佳電子科技有限公司	2SD2163	KEC	25+	TO-TO-220F	12300	獨(dú)立分銷商公司只做原裝誠心經(jīng)營免費(fèi)試樣正品保證	詢價(jià)
深圳市博中泰實(shí)業(yè)有限公司	2SD2163	NEC	24+	TO-220F	60000	全新原裝現(xiàn)貨	詢價(jià)
深圳市芯澤盛世科技有限公司	2SD2164	NEC	25+	TO-220F	8880	原裝認(rèn)準(zhǔn)芯澤盛世！	詢價(jià)

更多2SD216供應(yīng)商更新時(shí)間2020-4-2 17:49:00

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