| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
High-gain Amplifier Transistor (30V, 0.3A) Features 1) Darlington connection for a high hFE. (DC current gain=5000(Min.)at VCE=3V, IC=10mA) 2) High input impedance. Application High gain amplifier 文件:61.5 Kbytes 頁數(shù):3 Pages | ROHM 羅姆 | ROHM | ||
Silicon NPN transistor in a SOT-23 Plastic Package Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Darlington connection for a high hFE, high input impedance. Applications High-gain amplifier transistor. 文件:933.83 Kbytes 頁數(shù):6 Pages | FOSHAN 藍(lán)箭電子 | FOSHAN | ||
High-gain Amplifier Transistor (30V, 0.3A) Features 1) Darlington connection for a high hFE. (DC current gain=5000(Min.)at VCE=3V, IC=10mA) 2) High input impedance. Application High gain amplifier 文件:61.5 Kbytes 頁數(shù):3 Pages | ROHM 羅姆 | ROHM | ||
絲?。?a target="_blank" title="Marking" href="/d2143/marking.html">D2143;Package:SOT-428;Medium Power Transistor(Motor, Relay drive) (60?10V, 2A) Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to L loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode. 文件:89.73 Kbytes 頁數(shù):4 Pages | ROHM 羅姆 | ROHM | ||
High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 文件:132.83 Kbytes 頁數(shù):4 Pages | ROHM 羅姆 | ROHM | ||
High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE= 1200 (Typ.) 2) High emitter-base voltage. VEBO=12V (Min.) 3) Low VCE (sat). VCE (sat)= 0.18V (Typ.) (IC/ IB= 500mA / 20mA) Structure Epitaxial planar type NPN silicon transistor 文件:96.46 Kbytes 頁數(shù):5 Pages | ROHM 羅姆 | ROHM | ||
High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 文件:112.63 Kbytes 頁數(shù):4 Pages | ROHM 羅姆 | ROHM | ||
High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 文件:132.83 Kbytes 頁數(shù):4 Pages | ROHM 羅姆 | ROHM | ||
High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 文件:132.83 Kbytes 頁數(shù):4 Pages | ROHM 羅姆 | ROHM | ||
High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 文件:132.83 Kbytes 頁數(shù):4 Pages | ROHM 羅姆 | ROHM |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-NPN
- 性質(zhì):
低頻或音頻放大 (LF)_開關(guān)管 (S)_功率放大 (L
- 封裝形式:
直插封裝
- 極限工作電壓:
130V
- 最大電流允許值:
10A
- 最大工作頻率:
<1MHZ或未知
- 引腳數(shù):
2
- 可代換的型號:
BDX11,BDY19,BDY74,2N3442,2N3773,2SD551,2SD732,2SD733,3DK208C,
- 最大耗散功率:
100W
- 放大倍數(shù):
- 圖片代號:
E-44
- vtest:
130
- htest:
999900
- atest:
10
- wtest:
100
技術(shù)參數(shù)
- IC:
6A
- PC:
35W
- hFEmin:
1500
- hFE條件VCE:
2V
- hFE條件IC:
3A
- VCE(sat)max:
1.5V
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-3 |
10000 |
全新 |
詢價 | |||
ROHM |
24+/25+ |
64594 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
ROHM |
25+ |
SOT |
1337 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
ROHM |
24+ |
SOT-23 |
740 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ROHM |
24+ |
8858 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存! |
詢價 | |||
ROHM |
24+ |
SOT23-3 |
5000 |
原裝現(xiàn)貨 |
詢價 | ||
ROHM |
2016+ |
SOT-23 |
11152 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
ROHM |
23+ |
SOT-23 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
ROHM |
TO92 |
5600 |
全新原裝進(jìn)口自己庫存優(yōu)勢 |
詢價 | |||
ROHM |
24+ |
TO-92S |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 |
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