| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package which can be installed to the heat sink 文件：54.57 Kbytes 頁數(shù)：3 Pages | PANASONIC 松下 | PANASONIC | ||
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package which can be installed to the heat sink 文件：54.57 Kbytes 頁數(shù)：3 Pages | PANASONIC 松下 | PANASONIC | ||
絲印：C7；Package：TO-220；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) 文件：91.07 Kbytes 頁數(shù)：1 Pages | ROHM 羅姆 | ROHM | ||
isc Silicon NPN Power Transistor Silicon NPN Power Transistor DESCRIPTION ·High Collector Current:: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 3A ·Wide Area of Safe Operation ·Complement to Type 2SB1334 APPLICATIONS ·Designed for low frequency power amplifier applications. 文件：254.7 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
絲?。?a target="_blank" title="Marking" href="/c7/marking.html">C7；Package：TO-220；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) 文件：91.07 Kbytes 頁數(shù)：1 Pages | ROHM 羅姆 | ROHM | ||
NPN SILICON TRANSISTOR DESCRIPTION The 2SD1779 is high hFE transistor. It is suitable for use to operate from IC without predriver, such as hammer or motor driver. 文件：137.18 Kbytes 頁數(shù)：2 Pages | NEC 瑞薩 | NEC | ||
NPN SILICON TRANSISTOR DESCRIPTION The 2SD1780 is high hFE transistor, built-in a zener diode at B-C. It is suitable for use to operate from IC without predriver, such as hammer or motor driver. 文件：142.18 Kbytes 頁數(shù)：2 Pages | NEC 瑞薩 | NEC | ||
NPN Silicon Plastic Encapsulated Transistor 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor FEATURES Very low VCE(sat).VCE(sat) 文件：78.24 Kbytes 頁數(shù)：3 Pages | SECOS 喜可士 | SECOS | ||
SOT-23 Plastic-Encapsulate Transistors FEATURES Very low VCE(sat). VCE(sat) 文件：1.64668 Mbytes 頁數(shù)：4 Pages | DGNJDZ 南晶電子 | DGNJDZ | ||
NPN Low Vce(sat) Transistor Features ? Silicon NPN epitaxial type ? Low Vce(sat) 0.14V(max)@Ic/Ib= 1A/100mA ? High collector current capability ? Excellent DC current gain characteristics ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 standard 文件：270.48 Kbytes 頁數(shù)：5 Pages | PANJIT 強茂 | PANJIT |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
HI.UEB_HI.BETA
- 封裝形式：
直插封裝
- 極限工作電壓：
60V
- 最大電流允許值：
2A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
2SC2665,2SD1207,2SD1265,
- 最大耗散功率：
1W
- 放大倍數(shù)：
β>800
- 圖片代號：
A-70
- vtest：
60
- htest：
999900
- atest：
2
- wtest：
1
技術(shù)參數(shù)
- VCEO (V)：
60
- hFE min.：
800
- hFE max.：
3200
- Pc (W)：
1
- Production Status：
Non-promotion
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ROHM |
24+ |
30000 |
詢價 | ||||
NEC |
24+ |
4231 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | |||
NEC |
24+ |
6540 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | |||
23+ |
斜頭管 |
24800 |
正品原裝貨價格低 |
詢價 | |||
NEC |
2447 |
TO-92L |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
NEC |
23+ |
TO-92L |
5000 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳 |
詢價 | ||
24+ |
N/A |
62000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
FUJITS |
23+ |
TO-3 |
5000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
NEC |
18+;19+ |
斜頭管 |
431 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
NEC |
22+ |
TO-92L |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 |
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