TRANSISTOR(NPN)

RM TECHNOLOGY

瑞美科

Bipolar Transistor

UTC

友順

晶體管

JSCJ

長晶科技

SILICON TRANSISTORS

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES ? Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) ? Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A ? Complementary transistor with t

文件：235.8 Kbytes 頁數(shù)：6 Pages

RENESAS

瑞薩

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR（NPN） FEATURES ● Low collector saturation voltage ● High break down voltage ● High total power dissipation

文件：1.047099 Mbytes 頁數(shù)：3 Pages

JIANGSU

長電科技

NPN SILICON TRANSISTOR

DESCRIPTION 2SD1616A is NPN silicon planar transistor designed for use in driver and output stages of AF amplifier, general purpose application.

文件：111.43 Kbytes 頁數(shù)：1 Pages

MICRO-ELECTRONICS

絲?。?a target="_blank" title="Marking" href="/1616a/marking.html">1616A；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low collector saturation voltage High break down voltage High total power dissipation

文件：1.93904 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/d1616a/marking.html">D1616A；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEA TURE Power dissipation

文件：1.75193 Mbytes 頁數(shù)：5 Pages

DGNJDZ

南晶電子

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：148.22 Kbytes 頁數(shù)：1 Pages

WINNERJOIN

永而佳

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURE Power dissipation

文件：294.41 Kbytes 頁數(shù)：2 Pages

KOOCHIN

灝展電子