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          首頁 >2SD14>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          2SD1484KFRAT146Q

          Middle Power Transistor (50V, 500mA)

          lFeatures 1) High current. (IC=500mA) 2) Low VCE(sat) VCE(sat)≦400mV at IC=150mA/IB=15mA lApplication LOW FREQUENCY AMPLIFIER, DRIVER

          文件:1.38168 Mbytes 頁數(shù):8 Pages

          ROHM

          羅姆

          2SD1484KT146R

          Medium Power Transistor (50V,0.5A)

          Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.

          文件:81.02 Kbytes 頁數(shù):3 Pages

          ROHM

          羅姆

          2SD1485

          isc Silicon NPN Power Transistor

          Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@IC= 3A ·Wide Area of Safe Operation ·Complement to Type 2SB1054 APPLICATIONS ·Designed for high power amplifier applications.

          文件:250.17 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SD1485

          Silicon NPN triple diffusion planar type(For high power amplification)

          Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1054 ■Features ● Extremely satisfactory linearity of the forward current transfer ratio hFE ● Wide area of safe operation (ASO) ● High transition frequency fT ● Full-pack package which can

          文件:44.75 Kbytes 頁數(shù):2 Pages

          PANASONIC

          松下

          2SD1486

          Complementary pair with 2SB1055

          Si NPN Triple Diffused Planar High Power Amplifier Complementary pair with 2SB1055 Features ● Exceptionally good linearity of hFE ● Wide area of safe operation (ASO) ● High fT ● Full Pack package for simplified mounting onlyu by a screw, requires no insulator.

          文件:39.46 Kbytes 頁數(shù):1 Pages

          PANASONIC

          松下

          2SD1486

          Silicon NPN Power Transistors

          Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SB1055 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications

          文件:139.6 Kbytes 頁數(shù):4 Pages

          ISC

          無錫固電

          2SD1486

          Silicon NPN Power Transistors

          Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SB1055 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications

          文件:147.28 Kbytes 頁數(shù):4 Pages

          SAVANTIC

          2SD1487

          isc Silicon NPN Power Transistor

          DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@IC= 5A ·Wide Area of Safe Operation ·Complement to Type 2SB1056 APPLICATIONS ·Designed for high power amplifier applications.

          文件:250.17 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SD1487

          SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER

          High Power Amplifier Complementary Pair with 2SB1056

          文件:39.3 Kbytes 頁數(shù):1 Pages

          PANASONIC

          松下

          2SD1488

          SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER

          Si NPN Triple Diffused Planar High Power Amplifier Complementary Pair with 2SB1057 Features ? Exceptionally good linearity of hFE. ? Wide area of safe operation (ASO) ? High fT ? Full Pack package for simplified mounting only by a screw, requires no insulator.

          文件:45.88 Kbytes 頁數(shù):1 Pages

          PANASONIC

          松下

          晶體管資料

          • 型號:

            2SD1436K

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產廠家:

          • 制作材料:

            Si-N+Darl+Di

          • 性質:

            低頻或音頻放大 (LF)_開關管 (S)_功率放大 (L

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            120V

          • 最大電流允許值:

            10A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            3

          • 可代換的型號:

            BDV65C,BDV67B,BDW83D,2SD1210,

          • 最大耗散功率:

            80W

          • 放大倍數(shù):

            β>1000

          • 圖片代號:

            B-70

          • vtest:

            120

          • htest:

            999900

          • atest:

            10

          • wtest:

            80

          供應商型號品牌批號封裝庫存備注價格
          RENESAS
          26+
          TO3P
          360000
          進口原裝現(xiàn)貨
          詢價
          HIT
          24+
          600
          詢價
          ROHM/羅姆
          22+
          TO-3P
          6000
          十年配單,只做原裝
          詢價
          RENESAS
          06+
          TO3P
          400
          一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          詢價
          RENESASHI
          NA
          8560
          一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
          詢價
          TOS
          23+
          TO
          20000
          正品原裝貨價格低
          詢價
          RENESASHITACHI
          25+
          NA
          880000
          明嘉萊只做原裝正品現(xiàn)貨
          詢價
          RENESAS
          2023+
          TO3P
          8800
          正品渠道現(xiàn)貨 終端可提供BOM表配單。
          詢價
          RENESAS
          23+
          TO3P
          500
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          ROHM
          25+
          TO-3P
          12300
          獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
          詢價
          更多2SD14供應商 更新時間2026-1-20 15:53:00
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