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          首頁 >2SD14>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          2SD1479

          Silicon NPN Power Transistors

          DESCRIPTION ? With TO-3PN package ? High voltage ,high reliability ? High speed switching ? Wide area of safe operation APPLICATIONS ? For horizontal deflection output applications

          文件:133.86 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          2SD1479

          Silicon NPN Power Transistors

          DESCRIPTION ? With TO-3PN package ? High voltage ,high reliability ? High speed switching ? Wide area of safe operation APPLICATIONS ? For horizontal deflection output applications

          文件:135.85 Kbytes 頁數(shù):3 Pages

          SAVANTIC

          2SD1480

          isc Silicon NPN Power Transistor

          DESCRIPTION ? Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 2A ? Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ? Good Linearity of hFE ? Complement to Type 2SB1052 APPLICATIONS ? Designed for power amplifier applications.

          文件:253.13 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SD1480

          Silicon NPN triple diffusion planar type(For power amplification)

          Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1052 ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink w

          文件:46.01 Kbytes 頁數(shù):2 Pages

          PANASONIC

          松下

          2SD1481

          SILICON POWER TRANSISTOR

          NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES ? On-chip C-to-B Zener diode for surge voltage absorption ? Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) ? Ideal for use in a direct drive from IC

          文件:258.589 Kbytes 頁數(shù):6 Pages

          RENESAS

          瑞薩

          2SD1481

          isc Silicon NPN Darlington Power Transistor

          DESCRIPTION ? On-chip C-to-B Zener diode for surge voltage absorption ? Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1A ? High DC Current Gain : hFE= 2000(Min) @IC= 1A ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and

          文件:277.48 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SD1481

          SILICON POWER TRANSISTOR

          NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES ? On-chip C-to-B Zener diode for surge voltage absorption ? Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) ? Ideal for use in a direct drive from IC t

          文件:109.6 Kbytes 頁數(shù):4 Pages

          NEC

          瑞薩

          2SD1484K

          Medium Power Transistor

          Features ● High current.(IC=5A). ● Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.

          文件:36.96 Kbytes 頁數(shù):1 Pages

          KEXIN

          科信電子

          2SD1484K

          絲?。?a target="_blank" title="Marking" href="/yr/marking.html">YR;Package:SOT-323;Medium Power Transistor (50V, 0.5A)

          Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.

          文件:42.16 Kbytes 頁數(shù):3 Pages

          ROHM

          羅姆

          2SD1484KFRA

          Middle Power Transistor (50V, 500mA)

          lFeatures 1) High current. (IC=500mA) 2) Low VCE(sat) VCE(sat)≦400mV at IC=150mA/IB=15mA lApplication LOW FREQUENCY AMPLIFIER, DRIVER

          文件:1.38168 Mbytes 頁數(shù):8 Pages

          ROHM

          羅姆

          晶體管資料

          • 型號:

            2SD1436K

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-N+Darl+Di

          • 性質(zhì):

            低頻或音頻放大 (LF)_開關(guān)管 (S)_功率放大 (L

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            120V

          • 最大電流允許值:

            10A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            3

          • 可代換的型號:

            BDV65C,BDV67B,BDW83D,2SD1210,

          • 最大耗散功率:

            80W

          • 放大倍數(shù):

            β>1000

          • 圖片代號:

            B-70

          • vtest:

            120

          • htest:

            999900

          • atest:

            10

          • wtest:

            80

          供應商型號品牌批號封裝庫存備注價格
          RENESAS
          26+
          TO3P
          360000
          進口原裝現(xiàn)貨
          詢價
          HIT
          24+
          600
          詢價
          ROHM/羅姆
          22+
          TO-3P
          6000
          十年配單,只做原裝
          詢價
          RENESAS
          06+
          TO3P
          400
          一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          詢價
          RENESASHI
          NA
          8560
          一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
          詢價
          TOS
          23+
          TO
          20000
          正品原裝貨價格低
          詢價
          RENESASHITACHI
          25+
          NA
          880000
          明嘉萊只做原裝正品現(xiàn)貨
          詢價
          RENESAS
          2023+
          TO3P
          8800
          正品渠道現(xiàn)貨 終端可提供BOM表配單。
          詢價
          RENESAS
          23+
          TO3P
          500
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          ROHM
          25+
          TO-3P
          12300
          獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
          詢價
          更多2SD14供應商 更新時間2026-1-20 15:53:00
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