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                >2SC58>規(guī)格書列表
                
          
            
          
                
          
                    
          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          2SC5808-251
          Silicon NPN Power Transistor
          
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·DC Current Gain-
: hFE= 20(Min)@ IC= 0.3A
APPLICATIONS
·DC-DC converter,relay drivers,lamp drivers,motor
drivers, inverter
          文件：295.33 Kbytes 頁數(shù)：2 Pages
          ISC
          無錫固電
          

          2SC5808-252
          Silicon NPN Power Transistor
          
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·DC Current Gain-
: hFE= 20(Min)@ IC= 0.3A
APPLICATIONS
·DC-DC converter,relay drivers,lamp drivers,motor
drivers, inverter
          文件：276.27 Kbytes 頁數(shù)：2 Pages
          ISC
          無錫固電
          

          2SC5810
          TOSHIBA Transistor Silicon NPN Epitaxial Type
          
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
   
? High DC current gain: hFE = 400 to 1000 (IC = 0.1 A)
? Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)
? High-speed switching: tf = 85 ns (typ.)
          文件：134.13 Kbytes 頁數(shù)：5 Pages
          TOSHIBA
          東芝
          

          2SC5810
          Bipolar Small-Signal Transistors
          
MOS GT30F126 30F126 30A/330V IGBT TO-220F



Toshiba 30F126 GT30F126


 


Reference site : http://monitor.net.ru/forum/30f126-info-494727.html


 


Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131)


: http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf
          文件：1.58274 Mbytes 頁數(shù)：73 Pages
          TOSHIBA
          東芝
          

          2SC5811
          Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
          
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications


Feature

high-voltage: VCBO = 1600V.

? High reliability (HVP process adopted). · MBIT process adopted.
          文件：40.28 Kbytes 頁數(shù)：3 Pages
          SANYO
          三洋
          

          2SC5812
          Silicon NPN Epitaxial VHF/UHF wide band amplifier
          
Features
? High power gain, Low noise figure at low power operation:
   |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)
          文件：94.18 Kbytes 頁數(shù)：10 Pages
          HITACHIHitachi Semiconductor
          日立日立公司
          

          2SC5812
          Silicon NPN Epitaxial VHF/UHF wide band amplifier
          
Application
? High power gain, Low noise figure at low power operation:
   |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)
          文件：208.51 Kbytes 頁數(shù)：9 Pages
          RENESAS
          瑞薩
          

          2SC5812WG-TR-E
          Silicon NPN Epitaxial VHF/UHF wide band amplifier
          
Application
? High power gain, Low noise figure at low power operation:
   |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)
          文件：208.51 Kbytes 頁數(shù)：9 Pages
          RENESAS
          瑞薩
          

          2SC5813
          Silicon NPN epitaxial planar type
          
Silicon NPN epitaxial planar type
For DC-DC converter
■ Features
? Low collector-emitter saturation voltage VCE(sat)
? Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
          文件：81.18 Kbytes 頁數(shù)：3 Pages
          PANASONIC
          松下
          

          2SC5814
          For Low Frequency Amplify Application Silicon NPN Epitaxial Type
          
DESCRIPTION
2SC5814，2SC5815，2SC5816，2SC5817 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage amplify application.
FEATURE
● Facilitates miniaturization and high-density mounting
● Excellent linearity of DC forward current gain
● Low colle
          文件：195.54 Kbytes 頁數(shù)：5 Pages
          ISAHAYA
          諫早電子
          

          
            
          
		
          
            
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