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首頁 >2SC5812WG-TR-E>規(guī)格書列表

型號	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
2SC5812WG-TR-E	文件：208.51 Kbytes Page：9 Pages	Silicon NPN Epitaxial VHF/UHF wide band amplifier Application ? High power gain, Low noise figure at low power operation: \|S21\|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) 文件：208.51 Kbytes 頁數：9 Pages	RENESAS 瑞薩	RENESAS
2SC5812WG-TR-E	文件：300 bytes Page：1 Pages	Silicon NPN Epitaxial VHF/UHF wide band amplifier Application\n? High power gain, Low noise figure at low power operation:\n?? \|S21\|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)	Renesas 瑞薩	Renesas
2SC5812	文件：208.51 Kbytes Page：9 Pages	Silicon NPN Epitaxial VHF/UHF wide band amplifier Application ? High power gain, Low noise figure at low power operation: \|S21\|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) 文件：208.51 Kbytes 頁數：9 Pages	RENESAS 瑞薩	RENESAS
2SC5812	文件：94.18 Kbytes Page：10 Pages	Silicon NPN Epitaxial VHF/UHF wide band amplifier Features ? High power gain, Low noise figure at low power operation: \|S21\|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) 文件：94.18 Kbytes 頁數：10 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI

更多2SC5812WG-TR-E供應商更新時間2026-1-19 22:58:00