Silicon NPN Epitaxial

Features ? High gain bandwidth product fT = 11 GHz Typ ? High gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：24.51 Kbytes 頁數(shù)：5 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features ? High gain bandwidth product fT = 11 GHz Typ ? High gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：145.45 Kbytes 頁數(shù)：7 Pages

RENESAS

瑞薩

Silicon NPN Epitaxial

Features ? High gain bandwidth product fT = 11 GHz Typ ? High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：169.44 Kbytes 頁數(shù)：6 Pages

RENESAS

瑞薩

Silicon NPN Epitaxial

Features ? High gain bandwidth product fT = 11 GHz Typ ? High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：24.75 Kbytes 頁數(shù)：5 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features ? High gain bandwidth product fT = 11 GHz Typ ? High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：169.44 Kbytes 頁數(shù)：6 Pages

RENESAS

瑞薩

NPN EPITAXIAL TYPE (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)

AUDIO POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. ? Complementary to 2SA1899

文件：88.66 Kbytes 頁數(shù)：1 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/cgr/marking.html">CGR；Package：SOT-89；Medium power transistor (50V, 1A)

Medium power transistor (50V, 1A) Features 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA / 50mA 2) PC=2W (on 40×40×0.7mm ceramic board) 3) Complements the 2SA1900

文件：64.81 Kbytes 頁數(shù)：3 Pages

ROHM

羅姆

Medium Power Transistor

Medium Power Transistor Features Low saturation voltage, typically VCE(sat)= 0.12V at IC/ IB= 500mA / 50mA. PC=2W (on 40×40×0.7mm ceramic board).

文件：50.27 Kbytes 頁數(shù)：1 Pages

KEXIN

科信電子

Low saturation voltage, typically VCE(sat)=0.12V at IC/IB=500mA/50mA

Medium power transistor (50V, 1A) Features 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA / 50mA 2) PC=2W (on 40×40×0.7mm ceramic board) 3) Complements the 2SA1900

文件：84.03 Kbytes 頁數(shù)：3 Pages

ROHM

羅姆

Medium power transistor (50V, 1A)

Medium power transistor (50V, 1A) Features 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA / 50mA 2) PC=2W (on 40×40×0.7mm ceramic board) 3) Complements the 2SA1900

文件：84.03 Kbytes 頁數(shù)：3 Pages

ROHM

羅姆