Very High-Definition CRT Display Horizontal Deflection Output Applications?????????????

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features ? High speed (tf=100ns typ). ? High reliability (HVP process). ? High breakdown voltage (VCBO=1600V). ? Adoption of MBIT process.

文件：84.07 Kbytes 頁(yè)數(shù)：3 Pages

SANYO

三洋

Very High-Definition CRT Display Horizontal Deflection Output Applications?????????????

Very High-Definition CRT Display Horizontal Deflection Output Applications

文件：88.83 Kbytes 頁(yè)數(shù)：3 Pages

SANYO

三洋

NPN TRIPLE DIFFUSED MESA TYPE (HOREZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS)

HOREZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500V. Low Saturation Voltage : VCE(sat) = 3 V (max.). High Speed : tf = 0.15μs (Typ.). Collector Metal (Fin) is Fully Covered with Mold resin. ((IS) Package)

文件：209.55 Kbytes 頁(yè)數(shù)：4 Pages

TOSHIBA

東芝

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV ·High speed switching applications

文件：166.52 Kbytes 頁(yè)數(shù)：4 Pages

ISC

無(wú)錫固電

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage ·Collector metal (fin) is fully covered with mold resin APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV ·High speed switching applications

文件：47.6 Kbytes 頁(yè)數(shù)：3 Pages

JMNIC

錦美電子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV ·High speed switching applications

文件：279.86 Kbytes 頁(yè)數(shù)：4 Pages

SAVANTIC

Silicon NPN Epitaxial

Features ? High gain bandwidth product fT = 10 GHz Typ ? High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：24.25 Kbytes 頁(yè)數(shù)：5 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features ? High gain bandwidth product fT = 10 GHz Typ ? High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：168.13 Kbytes 頁(yè)數(shù)：5 Pages

RENESAS

瑞薩

Silicon NPN Epitaxial

Features ? High gain bandwidth product fT = 10 GHz Typ ? High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：168.13 Kbytes 頁(yè)數(shù)：5 Pages

RENESAS

瑞薩

High Voltage Transistors

High Voltage Transistors

文件：79.47 Kbytes 頁(yè)數(shù)：1 Pages

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