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          首頁(yè) >2SC30>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          2SC3072

          Bipolar Small-Signal Transistors

          MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

          文件:1.58274 Mbytes 頁(yè)數(shù):73 Pages

          TOSHIBA

          東芝

          2SC3072

          Silicon NPN Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:280.06 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          2SC3072

          Silicon NPN Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:299.12 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          2SC3072

          TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

          Strobe Flash Applications Medium Power Amplifier Applications ? High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) ? Low collector saturation voltage : VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) ? High power di

          文件:152.32 Kbytes 頁(yè)數(shù):3 Pages

          TOSHIBA

          東芝

          2SC3072

          Silicon NPN Epitaxial

          Features ? High DC current gain. ? Low collector saturation voltage. ? High power dissipation.

          文件:40.31 Kbytes 頁(yè)數(shù):1 Pages

          KEXIN

          科信電子

          2SC3072-251

          Silicon NPN Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:299.12 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          2SC3072-252

          Silicon NPN Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:280.06 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          2SC3073

          Silicon NPN Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:299.69 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          2SC3073

          SILICON NPN EPITAXIAL TYPE(PCT PROCESS)

          POWER AMPLIFIER APPLICATIONS. CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES : ? Good Linearity of hFE ? Complementary to 2SA1243

          文件:232.57 Kbytes 頁(yè)數(shù):3 Pages

          TOSHIBA

          東芝

          2SC3073-251

          Silicon NPN Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:299.69 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          晶體管資料

          • 型號(hào):

            2SC3021

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-NPN

          • 性質(zhì):

            超高頻/特高頻 (UHF)_功率放大 (L)

          • 封裝形式:

            貼片封裝

          • 極限工作電壓:

            35V

          • 最大電流允許值:

            2A

          • 最大工作頻率:

            520MHZ

          • 引腳數(shù):

            4

          • 可代換的型號(hào):

            2SC1967,2SC2284,2SC3108,

          • 最大耗散功率:

            8W

          • 放大倍數(shù):

          • 圖片代號(hào):

            G-253

          • vtest:

            35

          • htest:

            520000000

          • atest:

            2

          • wtest:

            8

          詳細(xì)參數(shù)

          • 型號(hào):

            2SC30

          • 制造商:

            MITSUBISHI

          • 制造商全稱:

            Mitsubishi Electric Semiconductor

          • 功能描述:

            NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          MITSUBI
          2019+
          TO-58
          6992
          原廠渠道 可含稅出貨
          詢價(jià)
          MITSUBISHI/三菱
          23+
          1688
          房間現(xiàn)貨庫(kù)存:QQ:373621633
          詢價(jià)
          富士
          10+
          主營(yíng)模塊
          500
          原裝正品,絕對(duì)正品,現(xiàn)貨供應(yīng)
          詢價(jià)
          NEC
          23+
          高頻管
          1200
          專營(yíng)高頻管模塊,全新原裝!
          詢價(jià)
          MITSUBISHI
          24+
          46
          詢價(jià)
          MITSUBISHI
          24+
          三極管
          3560
          原裝現(xiàn)貨假一罰十
          詢價(jià)
          MITSUBIS
          24+
          160
          現(xiàn)貨供應(yīng)
          詢價(jià)
          MITSUBIS
          23+
          TO-59
          8510
          原裝正品代理渠道價(jià)格優(yōu)勢(shì)
          詢價(jià)
          MITSUBIS
          1922+
          TO-58
          8600
          萊克訊原廠貨源每一片都來(lái)自原廠原裝現(xiàn)貨薄利多
          詢價(jià)
          N/A
          23+
          80000
          專注配單,只做原裝進(jìn)口現(xiàn)貨
          詢價(jià)
          更多2SC30供應(yīng)商 更新時(shí)間2026-1-20 16:04:00
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