Silicon Epitaxial Planar Transistor

FEATURES ● Low collector to emitter saturation voltage. ● Excellent linearity of DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● For hybrid IC,small type machine low frequency voltage amplify application.

文件：171.99 Kbytes 頁數(shù)：4 Pages

BILIN

銀河微電

TRANSISTOR (NPN)

FEATURES ● Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) ● Excellent linearity of DC forward current gain

文件：849.5 Kbytes 頁數(shù)：3 Pages

HTSEMI

金譽(yù)半導(dǎo)體

LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC3052 is a mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.3V max（@Ic=100mA,IB=10mA） ● Excellent linearity of DC forward gain. ● Super mini packa

文件：220.83 Kbytes 頁數(shù)：5 Pages

ISAHAYA

諫早電子

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：80.15 Kbytes 頁數(shù)：1 Pages

JIANGSU

長電科技

NPN Transistor

Features ● Collector current :IC=0.2A ● Power dissipation :PC=0.15W

文件：41.64 Kbytes 頁數(shù)：1 Pages

KEXIN

科信電子

NPN Silicon Plastic-Encapsulate Transistor

FEATURE ? Excellent linearity of DC forward current gain. ? Low collector to emitter saturation voltage VCE(sat)=0.3V max. (@IC=100mA, IB=10mA)

文件：352.49 Kbytes 頁數(shù)：3 Pages

SECOS

喜可士

絲?。?a target="_blank" title="Marking" href="/le/lf/lg/marking.html">LE/LF/LG；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● Low collector to emitter saturation voltage. ● Excellent linearity of DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● For hybrid IC,small type machine low frequency voltage amplify application.

文件：1.08908 Mbytes 頁數(shù)：2 Pages

LUGUANG

魯光電子