絲印：2SC3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features ? Wide common-mode voltage: – Operational voltage: ?5 V to +110 V – Survival voltage: ?20 V to +120 V ? Bidirectional operation ? High small signal bandwidth: 1.1 MHz (at all gains) ? Slew rate: 8 V/μs ? Step response settling time to 1: 1 μs ? Excellent CMRR: 166 dB ? Accuracy

文件：2.41169 Mbytes 頁數(shù)：33 Pages

TI

德州儀器

絲印：2SC3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features ? Wide common-mode voltage: – Operational voltage: ?5 V to +110 V – Survival voltage: ?20 V to +120 V ? Bidirectional operation ? High small signal bandwidth: 1.1 MHz (at all gains) ? Slew rate: 8 V/μs ? Step response settling time to 1: 1 μs ? Excellent CMRR: 166 dB ? Accuracy

文件：2.4574 Mbytes 頁數(shù)：38 Pages

TI

德州儀器

絲?。?strong>2SC3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features ? Wide common-mode voltage: – Operational voltage: ?5 V to +110 V – Survival voltage: ?20 V to +120 V ? Bidirectional operation ? High small signal bandwidth: 1.1 MHz (at all gains) ? Slew rate: 8 V/μs ? Step response settling time to 1: 1 μs ? Excellent CMRR: 166 dB ? Accuracy

文件：2.66176 Mbytes 頁數(shù)：43 Pages

TI

德州儀器

絲?。?strong>2SC3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features ? Wide common-mode voltage: – Operational voltage: ?5 V to +110 V – Survival voltage: ?20 V to +120 V ? Bidirectional operation ? High small signal bandwidth: 1.1 MHz (at all gains) ? Slew rate: 8 V/μs ? Step response settling time to 1: 1 μs ? Excellent CMRR: 166 dB ? Accuracy

文件：2.66187 Mbytes 頁數(shù)：43 Pages

TI

德州儀器

絲印：LE/LF/LG；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● Low collector to emitter saturation voltage. ● Excellent linearity of DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● For hybrid IC,small type machine low frequency voltage amplify application.

文件：1.08908 Mbytes 頁數(shù)：2 Pages

LUGUANG

魯光電子

絲?。?a target="_blank" title="Marking" href="/le/marking.html">LE；Package：SOT-23；Excellent linearity of DC forward current gain

FEATURES Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA)

文件：2.23809 Mbytes 頁數(shù)：3 Pages

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

絲?。?a target="_blank" title="Marking" href="/lf/marking.html">LF；Package：SOT-23；Excellent linearity of DC forward current gain

FEATURES Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA)

文件：2.23809 Mbytes 頁數(shù)：3 Pages

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

HF Amp Applications?

HF Amplifier Applications Features ? FBET series. ? Very small-sized package permitting sets to be small sized and slim. ? High fT (fT=750MHz typ.) and small Cre (Cre=0.6pF typ).

文件：109.54 Kbytes 頁數(shù)：4 Pages

SANYO

三洋

TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)

UHF BAND POWER AMPLIFIER APPLICATIONS ● Output Power : Po=3W (Min.) (f=470MHz, VCC=12.6V, Pi=.0.4W)

文件：115.22 Kbytes 頁數(shù)：2 Pages

TOSHIBA

東芝

SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

[Toshiba] High Current Switching Application High Speed DC-DC Converter Application

文件：149.48 Kbytes 頁數(shù)：3 Pages

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