RF POWER TRANSISTOR NPN EPITAXAIL PLANAR TYPE

DESCRITION\n2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications.FEATURES\n● High power gain: Gpe ≥ 13dB\n?? @VCC = 7.2V, PO = 0.2W, f = 175MHz\n● Emitter ballasted construction, gold metallization for high\n?? reli ● High power gain: Gpe ≥ 13dB\n?? @VCC = 7.2V, PO = 0.2W, f = 175MHz\n● Emitter ballasted construction, gold metallization for high\n?? reliability and good performances.\n● TO-92 similar package is combinient for mountingAPPLICATION\n?? Driver amplifiers in general in VHF band portable or hand-held;

MITSUBISHI

三菱電機

NPN EPITAXIAL PLANAR TYPE

NJS

MITSUBISHI RF POWER TRANSISTOR

MITSUBISHI

三菱電機

Package：SC-72 成形引線；包裝：剪切帶（CT）帶盒（TB） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 25V 0.05A SPT

ROHM

羅姆