NPN EPITAXIAL PLANAR TYPE(for RF amplifiers on VHF band portable or hand-held radio applications)

DESCRITION 2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications. FEATURES ● High power gain: Gpe ≥ 13dB @VCC = 7.2V, PO = 0.2W, f = 175MHz ● Emitter ballasted construction, gold metallization for high

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MITSUBISHI

三菱電機(jī)

RF POWER TRANSISTOR NPN EPITAXAIL PLANAR TYPE

DESCRITION\n2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications.FEATURES\n● High power gain: Gpe ≥ 13dB\n?? @VCC = 7.2V, PO = 0.2W, f = 175MHz\n● Emitter ballasted construction, gold metallization for high\n?? reli ● High power gain: Gpe ≥ 13dB\n?? @VCC = 7.2V, PO = 0.2W, f = 175MHz\n● Emitter ballasted construction, gold metallization for high\n?? reliability and good performances.\n● TO-92 similar package is combinient for mountingAPPLICATION\n?? Driver amplifiers in general in VHF band portable or hand-held;

MITSUBISHI

三菱電機(jī)

TO-220

FAIRCHILD/仙童

上傳：深圳市拓億芯電子有限公司

TO-220

Slkor(薩科微

上傳：深圳市華康聯(lián)電子科技有限公司

T0-220

SANYO/三洋

上傳：深圳廣友電子有限公司