| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
isc Silicon NPN Power Transistor DESCRIPTION ? High Power Gain- : Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V ? High Reliability APPLICATIONS ? Designed for RF power amplifiers on VHF band mobile radio applications. 文件:219.34 Kbytes 頁(yè)數(shù):2 Pages | ISC 無(wú)錫固電 | ISC | ||
silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio DESCRIPTION 2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10dB, @VCC = 13.5V, Po = 6W, f = 175MHz ● Emitter ballasted construction, gold metallization for high reliabil 文件:153.08 Kbytes 頁(yè)數(shù):1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
絲?。?a target="_blank" title="Marking" href="/c1971/marking.html">C1971;Package:T-30E;NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) DESCRIPTION 2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10dB, @VCC = 13.5V, Po = 6W, f = 175MHz ● Emitter ballasted construction, gold metallization for high reliabil 文件:127.93 Kbytes 頁(yè)數(shù):3 Pages | MITSUBISHI 三菱電機(jī) | MITSUBISHI | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: ? Replaces Original 2SC1971 in Most Applications ? High Gain Reduces Drive Requirements ? Economical TO-220CE Package 文件:63.94 Kbytes 頁(yè)數(shù):1 Pages | ASI | ASI | ||
isc Silicon NPN Power Transistor DESCRIPTION ? High Power Gain- : Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V ? High Reliability APPLICATIONS ? Designed for RF power amplifiers on VHF band mobile radio applications. 文件:219.27 Kbytes 頁(yè)數(shù):2 Pages | ISC 無(wú)錫固電 | ISC | ||
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) DESCRIPTION 2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10dB, @VCC = 13.5V, Po = 6W, f = 175MHz ● Emitter ballasted construction, gold metallization for high reliabil 文件:127.93 Kbytes 頁(yè)數(shù):3 Pages | MITSUBISHI 三菱電機(jī) | MITSUBISHI | ||
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
文件:130.09 Kbytes 頁(yè)數(shù):3 Pages | MITSUBISHI 三菱電機(jī) | MITSUBISHI | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: ? Replaces Original 2SC1972 in Most Applications ? High Gain Reduces Drive Requirements ? Economical TO-220CE Package 文件:63.47 Kbytes 頁(yè)數(shù):1 Pages | ASI | ASI | ||
Silicon NPN RF Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 17V(Min) APPLICATIONS · 10 to 14 Watts Output Power Amplifiers In VHF Band Mobile Radio Applications. 文件:257.649 Kbytes 頁(yè)數(shù):2 Pages | ISC 無(wú)錫固電 | ISC | ||
TRANSISTOR NPN EPITAXIAL PLANAR 2SC1973 RF Amplifier and Driver Features ● High gain ● High fT ● Low Cob 2SC1980 High Voltage, Low-noise Amplifier Complementary Pair with 2SA921 Features ● High VCEO ● Low NV 2SC2076 RF Amplifier Features ● Suitable for RF amp., OSC, mix. and IF amp. in FM/AM radios. ● Large with 文件:227.33 Kbytes 頁(yè)數(shù):6 Pages | PANASONIC 松下 | PANASONIC |
技術(shù)參數(shù)
- Output Power:
7(Typ)W
- Number of Elements per Chip:
1
- Minimum DC Current Gain:
- Maximum Operating Temperature:
150°C
- Maximum Emitter Base Voltage:
4V
- Maximum DC Collector Current:
2A
- Maximum Collector Emitter Voltage:
17V
- Maximum Collector Base Voltage:
35V
- Configuration:
Single
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MITSUBISH |
25+ |
TO-220 |
26067 |
MITSUBISH全新特價(jià)2SC1971即刻詢(xún)購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
詢(xún)價(jià) | ||
MITSUBIS |
2019+ |
SMD |
6992 |
原廠(chǎng)渠道 可含稅出貨 |
詢(xún)價(jià) | ||
MITSUBISHI/三菱 |
23+ |
1688 |
房間現(xiàn)貨庫(kù)存:QQ:373621633 |
詢(xún)價(jià) | |||
MITSUBISHI |
24+ |
TO-220 |
9872 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | ||
MITSUBISH |
24+ |
TO-220 |
66500 |
只做原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | ||
三菱 |
24+ |
TO220 |
45860 |
原裝正品 特價(jià)現(xiàn)貨(香港 新加坡 日本) |
詢(xún)價(jià) | ||
MIT |
21+ |
明嘉萊只做原裝正品現(xiàn)貨 |
2510000 |
T0220 |
詢(xún)價(jià) | ||
MITSUBISHI/三菱 |
20+ |
TO-220 |
10000 |
詢(xún)價(jià) | |||
MIT |
25+ |
T0220 |
1300 |
全新原裝三凌 |
詢(xún)價(jià) | ||
MITSUBISHI |
24+ |
TO220 |
3742 |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
更多- AIP5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- 4TPE330MW
相關(guān)庫(kù)存
更多- COS5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- GRM21BR71H104JA11#
- 4TPE330M

