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          首頁 >2SC18>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          2SC1815-GR

          SILICON NPN TRANSISTORS

          DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

          文件:305.12 Kbytes 頁數(shù):3 Pages

          CENTRAL

          2SC1815-H

          絲?。?a target="_blank" title="Marking" href="/hf/marking.html">HF;Package:SOT-23;NPN Transistors

          Features ● Power dissipation

          文件:555.25 Kbytes 頁數(shù):3 Pages

          YFWDIODE

          佑風(fēng)微

          2SC1815K

          NPN Type Plastic Encapsulate Transistors

          FEATURES ? Power Dissipation PCM: 0.2 W ( Ta = 25 °C ) ? Collector Current ICM: 0.15 A ? Collector-Base Voltage V(BR)CBO: 60 V

          文件:166.38 Kbytes 頁數(shù):3 Pages

          SECOS

          喜可士

          2SC1815L

          TRANSISTOR (AUDIO FREQUENCY VOLTAGE, LOW NOISE AMPLIFIER APPLICATIONS)

          Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications ? High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) ? Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

          文件:214.19 Kbytes 頁數(shù):3 Pages

          TOSHIBA

          東芝

          2SC1815-L

          絲印:HFL;Package:SOT-23;NPN Transistors

          Features ● Power dissipation

          文件:555.25 Kbytes 頁數(shù):3 Pages

          YFWDIODE

          佑風(fēng)微

          2SC1815L-GR

          TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

          Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications ? High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) ? Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

          文件:256.029 Kbytes 頁數(shù):4 Pages

          TOSHIBA

          東芝

          2SC1815LT1

          SOT-23 Plastic-Encapsulate Transistors (NPN)

          TRANSISTOR (NPN) FEATURES Power dissipation

          文件:168.66 Kbytes 頁數(shù):2 Pages

          TGS

          2SC1815LT1

          NPN EPITAXIAL SILICON TRANSISTOR

          NPN EPITAXIAL SILICON TRANSISTOR * Complement to 2SA1015 * Collector Current :Ic=150mA

          文件:67.95 Kbytes 頁數(shù):1 Pages

          WINNERJOIN

          永而佳

          2SC1815L-Y

          Audio Frequency General Purpose Amplifier Applications

          Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications ? High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) ? Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

          文件:279.37 Kbytes 頁數(shù):4 Pages

          TOSHIBA

          東芝

          2SC1815-O

          SILICON NPN TRANSISTORS

          DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

          文件:305.12 Kbytes 頁數(shù):3 Pages

          CENTRAL

          技術(shù)參數(shù)

          • VCEO (V):

            120

          • hFE min.:

            200

          • hFE max.:

            1200

          • Pc (W):

            0.5

          • Production Status:

            EOL

          供應(yīng)商型號品牌批號封裝庫存備注價格
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          NEC
          96+
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          2900
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          24+
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          2447
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          100500
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          NEC
          23+
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          全新原裝正品現(xiàn)貨,支持訂貨
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          SANYO
          2023+環(huán)保現(xiàn)貨
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          更多2SC18供應(yīng)商 更新時間2026-1-20 16:30:00
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